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EDD51323DBH-6ELS-F 参数 Datasheet PDF下载

EDD51323DBH-6ELS-F图片预览
型号: EDD51323DBH-6ELS-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M DDR位移动RAM ™ WTR (宽温度范围) ,低功耗功能 [512M bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function]
分类和应用: 双倍数据速率
文件页数/大小: 60 页 / 761 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD51323DBH-LS  
Timing Parameter Measured in Clock Cycle  
Number of clock cycle  
5.0ns  
tCK  
6.0ns  
min.  
7.5ns  
Parameter  
Symbol  
tWPD  
min.  
max.  
max.  
min.  
max.  
Unit  
tCK  
Write to pre-charge command delay  
(same bank)  
Read to pre-charge command delay  
(same bank)  
4 + BL/2  
4 + BL/2  
BL/2  
3 + BL/2  
tRPD  
BL/2  
BL/2  
tCK  
tCK  
Write to read command delay  
(to input all data)  
tWRD  
3 + BL/2  
2 + BL/2  
2 + BL/2  
Burst stop command to write  
command delay  
tBSTW  
tBSTZ  
tRWD  
tHZP  
3
3
3
tCK  
tCK  
tCK  
tCK  
(CL = 3)  
Burst stop command to DQ high-Z  
(CL = 3)  
Read command to write command  
delay (to output all data)  
(CL = 3)  
Pre-charge command to high-Z  
(CL = 3)  
3
3
3
3 + BL/2  
3
3 + BL/2  
3
3 + BL/2  
3
Write command to data in latency  
Write recovery  
tWCD  
tWR  
1
3
0
1
3
0
1
2
0
tCK  
tCK  
tCK  
DM to data in latency  
tDMD  
Mode register set command cycle  
tMRD  
2
2
2
tCK  
tCK  
time  
Self-refresh exit to non-column  
command  
tSREX  
24  
20  
16  
Auto-refresh period  
tRFC  
15  
2
12  
2
10  
1
tCK  
tCK  
tCK  
tCK  
Power-down entry  
tPDEN  
tPDEX  
tCKE  
Power-down exit to command input  
CKE minimum pulse width  
1
1
1
2
2
2
Preliminary Data Sheet E1432E20 (Ver. 2.0)  
11