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EDD51323DBH-6ELS-F 参数 Datasheet PDF下载

EDD51323DBH-6ELS-F图片预览
型号: EDD51323DBH-6ELS-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M DDR位移动RAM ™ WTR (宽温度范围) ,低功耗功能 [512M bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function]
分类和应用: 双倍数据速率
文件页数/大小: 60 页 / 761 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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PRELIMINARY DATA SHEET  
512M bits DDR Mobile RAM  
WTR (Wide Temperature Range), Low Power Function  
EDD51323DBH-LS (16M words × 32 bits)  
Specifications  
Features  
Density: 512M bits  
Organization: 4M words × 32 bits × 4 banks  
DLL is not implemented  
Low power consumption  
Package: 90-ball FBGA  
Partial Array Self-Refresh (PASR)  
Lead-free (RoHS compliant) and Halogen-free  
Power supply: VDD, VDDQ = 1.7V to 1.95V  
Data rate: 400Mbps/333Mbps (max.)  
2KB page size  
Row address: A0 to A12  
Column address: A0 to A8  
Four internal banks for concurrent operation  
Interface: LVCMOS  
Burst lengths (BL): 2, 4, 8, 16  
Burst type (BT):  
Auto Temperature Compensated Self-Refresh  
(ATCSR) by built-in temperature sensor  
Deep power-down mode  
Double-data-rate architecture; two data transfers per  
one clock cycle  
The high-speed data transfer is realized by the 2 bits  
prefetch pipelined architecture  
Bi-directional data strobe (DQS) is transmitted  
/received with data for capturing data at the receiver.  
Data inputs, outputs, and DM are synchronized with  
DQS  
DQS is edge-aligned with data for READs; center-  
Sequential (2, 4, 8, 16)  
Interleave (2, 4, 8, 16)  
/CAS Latency (CL): 3  
aligned with data for WRITEs  
Differential clock inputs (CK and /CK)  
Commands entered on each positive CK edge: data  
Precharge: auto precharge option for each burst  
and data mask referenced to both edges of DQS  
access  
Data mask (DM) for write data  
Driver strength: normal, 1/2, 1/4, 1/8  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period: 7.8µs  
Operating ambient temperature range  
TA = 25°C to +85°C  
Burst termination by burst stop command and  
precharge command  
Wide temperature range  
TA = 25°C to +85°C  
Document No. E1432E20 (Ver. 2.0)  
Date Published October 2009 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2008-2009