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U631H16DC25G1 参数 Datasheet PDF下载

U631H16DC25G1图片预览
型号: U631H16DC25G1
PDF下载: 下载PDF文件 查看货源
内容描述: [2KX8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 12 页 / 208 K
品牌: CYPRESS [ CYPRESS ]
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U631H16  
If the U631H16 is in a WRITE state at the end of power  
up RECALL, the SRAM data will be corrupted.  
Low Average Active Power  
To help avoid this situation, a 10 Kresistor should be  
The U631H16 has been designed to draw significantly  
less power when E is LOW (chip enabled) but the  
access cycle time is longer than 55 ns.  
When E is HIGH the chip consumes only standby cur-  
rent.  
connected between W and VCC  
.
Hardware Protection  
The U631H16 offers hardware protection against inad-  
vertent STORE operation through VCC sense.  
For VCC < VSWITCH the software initiated STORE opera-  
tion will be inhibited.  
The overall average current drawn by the part depends  
on the following items:  
1. CMOS or TTL input levels  
2. the time during which the chip is disabled (E HIGH)  
3. the cycle time for accesses (E LOW)  
4. the ratio of READs to WRITEs  
5. the operating temperature  
6. the VCC level  
The information describes the type of component and shall not be considered as assured characteristics. Terms of  
delivery and rights to change design reserved.  
11  
April 20, 2004  
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