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CY8C9540A-24PVXI 参数 Datasheet PDF下载

CY8C9540A-24PVXI图片预览
型号: CY8C9540A-24PVXI
PDF下载: 下载PDF文件 查看货源
内容描述: 20-, 40- ,和60位IO扩展器,带有EEPROM [20-, 40-, and 60-Bit IO Expander with EEPROM]
分类和应用: 并行IO端口微控制器和处理器外围集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 721 K
品牌: CYPRESS [ CYPRESS ]
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CY8C9520A, CY8C9540A  
CY8C9560A  
DC Electrical Characteristics  
DC Chip-Level Specifications  
Table 20 lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and -40°C  
TA 85°C, or 3.0V to 3.6V and -40°C TA 85°C, respectively. Typical parameters apply to 5V and 3.3V at 25°C and are for design  
guidance only.  
Table 20. CY8C9520A DC Chip-Level Specifications  
Symbol  
Vdd  
Description  
Supply voltage  
Min  
3.00  
Typ  
Max  
5.25  
Units  
Notes  
V
IDD  
Supply current Vdd 5V  
Supply current Vdd 3.3V  
3.8  
2.3  
5
3
mA  
mA  
Conditions are 5.0V, TA = 25 oC, IOH = 0.  
Conditions are 3.3V, TA = 25 oC, IOH = 0.  
IDD3  
Table 21. CY8C9540A DC Chip-Level Specifications  
Symbol  
Vdd  
Description  
Supply voltage  
Min  
3.00  
Typ  
Max  
Units  
Notes  
5.25  
9
V
IDD  
Supply current Vdd 5V  
Supply current Vdd 3.3V  
6
mA  
mA  
Conditions are 5.0V, TA = 25 oC, IOH = 0.  
Conditions are 3.3V, TA = 25 oC, IOH = 0.  
IDD3  
3.3  
6
Table 22. CY8C9560A DC Chip-Level Specifications  
Symbol  
Vdd  
Description  
Supply voltage  
Min  
3.00  
Typ  
Max  
Units  
Notes  
5.25  
25  
9
V
IDD  
Supply current Vdd 5V  
Supply current Vdd 3.3V  
15  
5
mA  
mA  
Conditions are 5.0V, TA = 25 oC, IOH = 0.  
Conditions are 3.3V, TA = 25 oC, IOH = 0.  
IDD3  
DC Programming Specifications  
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V  
and -40°C TA 85°C, or 3.0V to 3.6V and -40°C TA 85°C, respectively. Typical parameters apply to 5V and 3.3V at 25°C and  
are for design guidance only.  
Table 23. DC Programming Specifications  
Symbol  
FlashENPB  
FlashENT  
FlashDR  
Description  
Min  
Typ  
Max  
Units  
Notes  
Flash (EEPROM) endurance (by block) 10,000  
Erase/write cycles by block.  
Erase/write cycles.  
Flash endurance (total)a  
Flash data retention  
1,800,000  
10  
Years  
a. A maximum of 36 x 50,000 block endurance cycles is allowed. This may be balanced between operations on 36x1 blocks of 50,000 maximum cycles each, 36x2 blocks of 25,000 maximum cycles  
each, or 36x4 blocks of 12,500 maximum cycles each (to limit the total number of cycles to 36x50,000 and that no single block ever sees more than 50,000 cycles).  
Document Number: 38-12036 Rev. *B  
Page 16 of 24  
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