PSoC® 3: CY8C32 Family
Data Sheet
Table 11-47. EEPROM AC Specifications
Parameter
Description
Conditions
Min
–
Typ
2
Max
20
–
Units
ms
TWRITE
Single row erase/write cycle time
EEPROM data retention time, retention Average ambient temp, TA ≤ 25 °C,
period measured from last erase cycle 1M erase/program cycles
20
–
years
Average ambient temp, TA ≤ 55 °C,
20
10
–
–
–
–
100 K erase/program cycles
Average ambient temp.
TA ≤ 85 °C, 10 K erase/program
cycles
11.4.3 Nonvolatile Latches (NVL))
Table 11-48. NVL DC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
Erase and program voltage
V
DDD pin
1.71
–
5.5
V
Table 11-49. NVL AC Specifications
Parameter Description
NVL endurance
Conditions
Min
Typ
Max
Units
Programmed at 25 °C
1K
–
–
program/
erase
cycles
Programmed at 0 °C to 70 °C
100
–
–
program/
erase
cycles
NVL data retention time
Programmed at 25 °C
20
20
–
–
–
–
years
years
Programmed at 0 °C to 70 °C
11.4.4 SRAM
Table 11-50. SRAM DC Specifications
Parameter
Description
Conditions
Conditions
Min
Typ
Max
Units
VSRAM
SRAM retention voltage
1.2
–
–
V
Table 11-51. SRAM AC Specifications
Parameter
Description
Min
Typ
Max
Units
FSRAM
SRAM operating frequency
DC
–
50.01
MHz
Document Number: 001-56955 Rev. *J
Page 95 of 119
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