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CY7C1049DV33-10VXI 参数 Datasheet PDF下载

CY7C1049DV33-10VXI图片预览
型号: CY7C1049DV33-10VXI
PDF下载: 下载PDF文件 查看货源
内容描述: 取消当4兆位( 512K的×8 )静态RAM自动断电 [4-Mbit (512 K x 8) Static RAM Automatic power down when deselected]
分类和应用:
文件页数/大小: 14 页 / 847 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1049DV33
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65
C
to +150
C
Ambient Temperature with
Power Applied ......................................... –55
C
to +125
C
Supply Voltage on
V
CC
to Relative GND
................................–0.3 V to +4.6 V
DC Voltage Applied to Outputs
in High Z State
................................. –0.3 V to V
CC
+ 0.3 V
DC Input Voltage
............................. –0.3 V to V
CC
+ 0.3 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up Current .................................................... > 200 mA
Operating Range
Range
Industrial
Automotive
Ambient
Temperature
V
CC
Speed
10 ns
12 ns
–40
C
to +85
C
3.3 V
0.3 V
–40
C
to +125
C
3.3 V
0.3 V
Electrical Characteristics
Over the Operating Range
-10 (Industrial)
Parameter
V
OH
V
OL
V
IH[2]
V
IL[2]
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
GND < V
I
< V
CC
Test Conditions
V
CC
= Min, I
OH
= –4.0 mA
V
CC
= Min, I
OL
= 8.0 mA
Min
2.4
2.0
–0.3
–1
–1
100 MHz
83 MHz
66 MHz
40 MHz
I
SB1
Automatic CE
Power down Current
—TTL Inputs
Automatic CE
Power down Current
—CMOS Inputs
Max V
CC
, CE > V
IH
; V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max V
CC
, CE > V
CC
– 0.3 V,
V
IN
> V
CC
– 0.3 V, or V
IN
< 0.3 V,
f=0
Max
0.4
V
CC
+ 0.3
0.8
+1
+1
90
80
70
60
20
-12 (Automotive)
Min
2.4
2.0
–0.3
–1
–1
Max
0.4
V
CC
+ 0.3
0.8
+1
+1
95
85
75
25
Unit
V
V
V
V
A
A
mA
mA
mA
mA
mA
Output Leakage Current GND < V
OUT
< V
CC
,
Output Disabled
V
CC
Operating Supply
Current
V
CC
= Max,
f = f
MAX
= 1/t
RC
I
SB2
10
15
mA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
C
IN
C
OUT
Description
Input Capacitance
IO Capacitance
Test Conditions
T
A
= 25
C,
f = 1 MHz, V
CC
= 3.3 V
Max
8
8
Unit
pF
pF
Note
2. V
IL
(min.) = –2.0 V and V
IH
(max) = V
CC
+ 2 V for pulse durations of less than 20 ns.
Document Number: 38-05475 Rev. *G
Page 4 of 14