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7C1351-66 参数 Datasheet PDF下载

7C1351-66图片预览
型号: 7C1351-66
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx36流通型SRAM与NOBL TM架构 [128Kx36 Flow-Through SRAM with NoBL TM Architecture]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 185 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1351  
Pin Definitions  
Pin Number Name  
I/O  
Description  
5044,  
8182, 99,  
100, 3237  
A
Input-  
Synchronous  
Address Inputs used to select one of the 133,072 address locations. Sampled at  
the rising edge of the CLK.  
[16:0]  
9693  
BWS  
Input-  
Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the  
[3:0]  
Synchronous  
SRAM. Sampled on the rising edge of CLK. BWS controls DQ  
and DP , BWS  
0
[7:0] 0 1  
controls DQ  
and DP , BWS controls DQ  
and DP , BWS controls  
[15:8]  
1
2
[23:16] 2 0  
DQ  
and DP .  
[31:24]  
3
88  
85  
WE  
Input-  
Synchronous  
Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active  
LOW. This signal must be asserted LOW to initiate a write sequence.  
ADV/LD Input-  
Synchronous  
Advance/Load input used to advance the on-chip address counter or load a new  
address. When HIGH (and CEN is asserted LOW) the internal burst counter is  
advanced. When LOW, a new address can be loaded into the device for an access.  
After being deselected, ADV/LD should be driven LOW in order to load a new  
address.  
89  
98  
97  
92  
86  
CLK  
Input-Clock  
Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified  
with CEN. CLK is only recognized if CEN is active LOW.  
CE  
CE  
CE  
Input-  
Synchronous  
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in  
1
2
3
conjunction with CE and CE to select/deselect the device.  
2 3  
Input-  
Synchronous  
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in  
conjunction with CE and CE to select/deselect the device.  
1
3
Input-  
Synchronous  
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in  
conjunction with CE and CE to select/deselect the device.  
1
2
OE  
Input-  
Output Enable, active LOW. Combined with the synchronous logic block inside the  
Asynchronous device to control the direction of the I/O pins. When LOW, the I/O pins are allowed  
to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act  
as input data pins. OE is masked during the data portion of a write sequence,  
during the first clock when emerging from a deselected state and when the device  
has been deselected.  
87  
CEN  
Input-  
Synchronous  
Clock Enable Input, active LOW. When asserted LOW the clock signal is recog-  
nized by the SRAM. When deasserted HIGH the clock signal is masked. Since  
deasserting CEN does not deselect the device, CEN can be used to extend the  
previous cycle when required.  
2928,  
2522,  
DQ  
I/O-  
Synchronous  
Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that  
is triggered by the rising edge of CLK. As outputs, they deliver the data contained  
[31:0]  
1918,  
in the memory location specified by A  
during the previous clock rise of the  
[16:0]  
1312, 96,  
32, 7978,  
7572,  
read cycle. The direction of the pins is controlled by OE and the internal control  
logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH,  
DQ  
are placed in a three-state condition. The outputs are automatically  
[31:0]  
6968,  
6362,  
5956, 5352  
three-stated during the data portion of a write sequence, during the first clock when  
emerging from a deselected state, and when the device is deselected, regardless  
of the state of OE.  
1, 30, 51, 80  
31  
DP  
I/O-  
Synchronous  
Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to  
[3:0]  
DQ  
. During write sequences, DP is controlled by BWS , DP is controlled by  
[31:0] 0 0 1  
BWS , DP is controlled by BWS , and DP is controlled by BWS .  
1
2
2
3
3
MODE  
Input  
Strap pin  
Mode Input. Selects the burst orderof the device. Tied HIGH selects the interleaved  
burst order. Pulled LOW selects the linear burst order. MODE should not change  
states during operation. When left floating MODE will default HIGH, to an inter-  
leaved burst order.  
15, 16, 41, 65,  
91  
V
V
V
Power Supply  
Power supply inputs to the core of the device. Should be connected to 3.3V power  
supply.  
DD  
4, 11, 20, 27,  
54, 61, 70, 77  
I/O Power  
Supply  
Power supply for the I/O circuitry. Should be connected to a 3.3V power supply.  
DDQ  
SS  
5, 10, 14, 17,  
21, 26, 40, 60,  
64, 6667,  
Ground  
Ground for the device. Should be connected to ground of the system.  
55, 71, 76, 90  
3
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