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7C1351-66 参数 Datasheet PDF下载

7C1351-66图片预览
型号: 7C1351-66
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx36流通型SRAM与NOBL TM架构 [128Kx36 Flow-Through SRAM with NoBL TM Architecture]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 185 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1351  
.
Cycle Description Truth Table[1, 2, 3, 4, 5, 6]  
Address  
used  
ADV/  
LD  
Operation  
CE  
CEN  
WE  
BWS  
CLK  
Comments  
x
Deselected  
External  
1
0
L
X
X
L-H  
I/Os three-state following next  
recognized clock.  
Suspend  
-
X
1
X
X
X
X
L-H  
Clock ignored, all operations  
suspended.  
Begin Read  
Begin Write  
External  
External  
0
0
0
0
0
0
1
0
L-H  
L-H  
Address latched.  
Valid  
Address latched, data presented  
two valid clocks later.  
Burst Read  
Operation  
Internal  
X
0
1
X
X
L-H  
Burst Read operation. Previous  
access was a Read operation. Ad-  
dresses incremented internally in  
conjunction with the state of  
MODE.  
Burst Write  
Operation  
Internal  
X
0
1
X
Valid  
L-H  
Burst Write operation. Previous  
access was a Write operation. Ad-  
dresses incremented internally in  
conjunction with the state of  
MODE. Bytes written are deter-  
mined by BWS  
.
[3:0]  
Notes:  
1. X=Don't Care, 1=Logic HIGH, 0=Logic LOW, CE stands for ALL Chip Enables active. BWS = 0 signifies at least one Byte Write Select is active, BWS  
x
x
= Valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.  
2. Write is defined by WE and BWS  
. See Write Cycle Description table for details.  
[3:0]  
3. The DQ and DP pins are controlled by the current cycle and the OE signal.  
4. CEN=1 inserts wait states.  
5. Device will power-up deselected and the I/Os in a three-state condition, regardless of OE.  
6. OE assumed LOW.  
5
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