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CAT28F010 参数 Datasheet PDF下载

CAT28F010图片预览
型号: CAT28F010
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位的CMOS闪存 [1 Megabit CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 14 页 / 104 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT28F010  
(1)  
FUNCTION TABLE  
Pins  
WE  
VIH  
Mode  
Read  
CE  
VIL  
VIL  
VIH  
VIL  
VIL  
VIL  
VIL  
VIL  
OE  
VIL  
VIH  
X
VPP  
VPPL  
X
I/O  
DOUT  
High-Z  
High-Z  
31H  
Notes  
Output Disable  
Standby  
VIH  
X
VPPL  
X
Signature (MFG)  
Signature (Device)  
Program/Erase  
Write Cycle  
VIL  
VIL  
VIH  
VIH  
VIL  
VIH  
VIH  
VIL  
VIL  
VIH  
A0 = VIL, A9 = 12V  
A0 = VIH, A9 = 12V  
See Command Table  
During Write Cycle  
During Write Cycle  
X
B4H  
VPPH  
VPPH  
VPPH  
DIN  
DIN  
Read Cycle  
DOUT  
WRITE COMMAND TABLE  
Commands are written into the command register in one or two write cycles. The command register can be altered  
only when V is high and the instruction byte is latched on the rising edge of WE. Write cycles also internally latch  
PP  
addresses and data required for programming and erase operations.  
Pins  
First Bus Cycle  
Second Bus Cycle  
Mode  
Set Read  
Operation  
Address  
DIN  
00H  
90H  
90H  
20H  
A0H  
40H  
C0H  
FFH  
Operation  
Read  
Address  
DIN  
DOUT  
DOUT  
31H  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
X
X
AIN  
00  
01  
X
Read Sig. (MFG)  
Read Sig. (Device)  
Erase  
Read  
X
Read  
B4H  
X
Write  
20H  
DIN  
Erase Verify  
Program  
AIN  
X
Read  
X
DOUT  
Write  
AIN  
X
Program Verify  
Reset  
X
Read  
DOUT  
X
Write  
X
FFH  
Note:  
(1) Logic Levels: X = Logic ‘Do not care’ (VIH, VIL, VPPL, VPPH  
)
Doc. No. 25005-0A 2/98 F-1  
7