CAT28F010
D.C. OPERATING CHARACTERISTICS
V
= +5V ±10%, unless otherwise specified.
CC
Limits
Max.
±1
Symbol
Parameter
Min.
Unit
Test Conditions
ILI
Input Leakage Current
µA
VIN = VCC or VSS
VCC = 5.5V, OE = VIH
ILO
Output Leakage Current
±1
µA
µA
VOUT = VCC or VSS,
VCC = 5.5V, OE = VIH
ISB1
VCC Standby Current CMOS
100
CE = VCC ±0.5V,
VCC = 5.5V
ISB2
ICC1
VCC Standby Current TTL
VCC Active Read Current
1
mA
mA
CE = VIH, VCC = 5.5V
30
VCC = 5.5V, CE = VIL,
IOUT = 0mA, f = 6 MHz
(1)
ICC2
VCC Programming Current
VCC Erase Current
15
15
15
mA
mA
mA
VCC = 5.5V,
Programming in Progress
(1)
ICC3
VCC = 5.5V,
Erasure in Progress
(1)
ICC4
VCC Prog./Erase Verify Current
VCC = 5.5V, Program or
Erase Verify in Progress
IPPS
IPP1
VPP Standby Current
VPP Read Current
±10
200
30
µA
µA
VPP = VPPL
VPP = VPPH
(1)
IPP2
VPP Programming Current
mA
VPP = VPPH
,
Programming in Progress
(1)
IPP3
VPP Erase Current
30
5
mA
mA
VPP = VPPH,
Erasure in Progress
(1)
IPP4
VPP Prog./Erase Verify Current
VPP = VPPH, Program or
Erase Verify in Progress
VIL
Input Low Level TTL
–0.5
–0.5
0.8
0.8
V
V
VILC
VOL
VIH
Input Low Level CMOS
Output Low Level
0.45
V
IOL = 5.8mA, VCC = 4.5V
Input High Level TTL
Input High Level CMOS
Output High Level TTL
Output High Level CMOS
A9 Signature Voltage
A9 Signature Current
VCC Erase/Prog. Lockout Voltage
2
VCC+0.5
VCC+0.5
V
VIHC
VOH1
VOH2
VID
VCC*0.7
2.4
V
V
IOH = –2.5mA, VCC = 4.5V
IOH = –400µA, VCC = 4.5V
A9 = VID
VCC–0.4
11.4
V
13
V
(1)
IID
200
µA
V
A9 = VID
VLO
2.5
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 25005-0A 2/98 F-1
4
CATALYST [ CATALYST SEMICONDUCTOR ]
