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CAT28F010 参数 Datasheet PDF下载

CAT28F010图片预览
型号: CAT28F010
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位的CMOS闪存 [1 Megabit CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 14 页 / 104 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT28F010  
(1)  
Figure 5. Chip Erase Algorithm  
BUS  
OPERATION  
START ERASURE  
COMMAND  
COMMENTS  
RAMPS TO V  
V
PP  
(OR V  
PPH  
APPLY V  
PPH  
HARDWIRED)  
PP  
ALL BYTES SHALL BE  
PROGRAMMED TO 00  
BEFORE AN ERASE  
OPERATION  
PROGRAM ALL  
BYTES TO 00H  
STANDBY  
INITIALIZE  
ADDRESS  
INITIALIZE ADDRESS  
INITIALIZE  
PLSCNT = 0  
PLSCNT = PULSE COUNT  
WRITE ERASE  
SETUP COMMAND  
WRITE  
WRITE  
ERASE  
ERASE  
DATA = 20H  
WRITE ERASE  
COMMAND  
DATA = 20H  
WAIT  
TIME OUT 10ms  
ADDRESS = BYTE TO VERIFY  
WRITE ERASE  
VERIFY COMMAND  
ERASE  
VERIFY  
WRITE  
DATA =
A0H  
STOPS ERASE OPERATION  
TIME OUT 6µs  
WAIT  
INCREMENT  
ADDRESS  
READ DATA  
FROM DEVICE  
READ  
READ BYTE TO  
VERIFY ERASURE  
NO  
NO  
DATA =  
FFH?  
INC PLSCNT  
1000  
= ?  
COMPARE OUTPUT TO FF  
INCREMENT PULSE COUNT  
STANDBY  
YES  
YES  
LAST  
NO  
ADDRESS?  
YES  
DATA = 00H  
RESETS THE REGISTER  
FOR READ OPERATION  
WRITE READ  
COMMAND  
WRITE  
READ  
V
RAMPS TO V  
PPL  
PP  
(OR V  
APPLY V  
PPL  
APPLY V  
PPL  
STANDBY  
HARDWIRED)  
PP  
ERASURE  
COMPLETED  
ERASE  
ERROR  
Note:  
(1) The algorithm MUST BE FOLLOWED to ensure proper and reliable operation of the device.  
5108 FHD F10  
Doc. No. 25005-0A 2/98 F-1  
10  
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