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AS4SD4M16DG-10/XT 参数 Datasheet PDF下载

AS4SD4M16DG-10/XT图片预览
型号: AS4SD4M16DG-10/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 4梅格×16 SDRAM同步动态随机存取存储 [4 Meg x 16 SDRAM Synchronous DRAM Memory]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 50 页 / 1139 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD4M16  
Austin Semiconductor, Inc.  
WRITEs  
the last of a burst of two or the last desired of a longer burst.  
WRITE bursts are initiated with a WRITE command, The 64Mb SDRAM uses a pipelined architecture and therefore  
as shown in Figure 13.  
does not require the 2n rule associated with a prefetch architec-  
The starting column and bank addresses are provided ture. A WRITE command can be initiated on any clock cycle  
with the WRITE command, and AUTO PRECHARGE is either following a previous WRITE command. Full-speed random write  
enabled or disabled for that access. If AUTO PRECHARGE is accesses within a page can be performed to the same bank, as  
enabled, the row being accessed is precharged at the comple- shown in Figure 16, or each subsequent WRITE may be per-  
tion of the burst. For the generic WRITE commands used in the formed to a different bank.  
following illustrations, AUTO PRECHARGE is disabled.  
During WRITE bursts, the first valid data-in element  
will be registered coincident with the WRITE command. Subse-  
quent data elements will be registered on each successive posi-  
tive clock edge. Upon completion of a fixed-length burst, as-  
suming no other commands have been initiated, the DQs will  
T0  
T1  
T2  
T3  
remain High-Z and any additional input data will be ignored  
(see Figure 14). A full-page burst will continue until terminated.  
(At the end of the page, it will wrap to column 0 and continue.)  
Data for any WRITE burst may be truncated with a  
CLK  
WRITE  
NOP  
NOP  
NOP  
COMMAND  
subsequent WRITE command, and data for a fixed-length  
WRITE burst may be immediately followed by data for a WRITE  
command. The new WRITE command can be issued on any  
clock following the previous WRITE command, and the data  
provided coincident with the new command applies to the new  
command. An example is shown in Figure 15. Data n + 1 is either  
BANK,  
COL n  
ADDRESS  
DQ  
DIN  
n
DIN n+1  
NOTE: Burst length = 2. DQM is LOW.  
Figure 14  
WRITE BURST  
CLK  
T0  
T1  
T2  
CLK  
HIGH  
CKE  
WRITE  
WRITE  
NOP  
COMMAND  
CS\  
RAS\  
CAS\  
WE\  
BANK,  
COL b  
BANK,  
COL n  
ADDRESS  
DQ  
DIN  
n
DIN n+1  
DIN  
b
COLUMN ADDRESS  
A0-A7: x16  
NOTE: DQM is LOW. EachWRITE command may be to any bank.  
A8, A9, A11: x16  
DON’T CARE  
Figure 15  
ENABLE AUTO PRECHARGE  
A10  
DISABLE AUTO PRECHARGE  
WRITETO WRITE  
BA0,1  
BANK ADDRESS  
Figure 13  
WRITE COMMAND  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD4M16  
Rev. 1.5 10/01  
19  
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