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AS4SD4M16DG-10/XT 参数 Datasheet PDF下载

AS4SD4M16DG-10/XT图片预览
型号: AS4SD4M16DG-10/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 4梅格×16 SDRAM同步动态随机存取存储 [4 Meg x 16 SDRAM Synchronous DRAM Memory]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 50 页 / 1139 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD4M16  
Austin Semiconductor, Inc.  
Data from any READ burst may be truncated with a  
T0  
T1  
T2  
T3  
T4  
subsequent WRITE command, and data from a fixed-length  
READ burst may be immediately followed by data from a WRITE  
command (subject to bus turnaround limitations). The WRITE  
burst may be initiated on the clock edge immediately following  
the last (or last desired) data element from the READ burst,  
provided that I/O contention can be avoided. In a given  
system design, there may be a possibility that the device  
driving the input data will go Low-Z before the SDRAM DQs  
go High-Z. In this case, at least a single-cycle delay should  
occur between the last read data and the WRITE command.  
The DQM input is used to avoid I/O contention, as shown in  
Figures 9 and 10. The DQM signal must be asserted (HIGH) at  
least two clocks prior to the WRITE command (DQM latency is  
two clocks for output buffers) to suppress data-out from the  
READ. Once the WRITE command is registered, the DQs will  
go High-Z (or remain High-Z), regardless of the state of the  
DQM signal. The DQM signal must be de-asserted prior to the  
WRITE command (DQM latency is zero clocks for input  
buffers) to ensure that the written data is not masked. Figure 9  
shows the case where the clock frequency allows for bus  
contention to be avoided without adding a NOP cycle, and  
Figure 10 shows the case where the additional NOP is needed.  
CLK  
DQM  
READ  
NOP  
NOP  
COMMAND  
ADDRESS  
NOP  
WRITE  
BANK,  
COL n  
BANK,  
COL b  
t
CK  
t
HZ  
DOUT  
n
DIN b  
DQ  
t
DS  
NOTE: A CAS latency of three is used for illustration. The READ command may be to any  
bank, and the WRITE command may be to any bank. If a CAS latency of one is used, the  
DQM is not required.  
Figure 9  
READ TO WRITE  
T0  
T1  
T2  
T3  
T4  
T5  
CLK  
DQM  
COMMAND  
ADDRESS  
READ  
NOP  
NOP  
NOP  
NOP  
WRITE  
BANK,  
COL n  
BANK,  
COL b  
t
HZ  
DQ  
DOUT  
n
DIN b  
t
DS  
NOTE: A CAS latency of three is used for illustration. The READ command may be to any bank,  
and the WRITE command may be to any bank.  
DON’T CARE  
Figure 10  
READ TO WRITE WITH EXTRA  
CLOCK CYCLE  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD4M16  
Rev. 1.5 10/01  
16  
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