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AS4SD2M32DGX-6XT 参数 Datasheet PDF下载

AS4SD2M32DGX-6XT图片预览
型号: AS4SD2M32DGX-6XT
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32× 4银行( 64 MB) SDRAM同步 [512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 52 页 / 1943 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD2M32  
Austin Semiconductor, Inc.  
TRUTH TABLE 3: CURRENT STATE BANK n, COMMAND TO BANK n1,2,3,4,5,6  
CURRENT STATE CS\ RAS\ CAS\ WE\  
COMMAND (ACTION)  
COMMAND INHIBIT (NOP/Continue previous operation)  
NO OPERATION (NOP/Continue previous operation)  
ACTIVE (Select and active row)  
AUTO REFRESH  
LOAD MODE REGISTER  
NOTES  
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
L
L
L
X
H
H
L
L
H
L
L
H
L
X
H
H
H
L
L
H
L
L
H
L
L
L
ANY  
7
7
11  
10  
10  
8
10  
10  
8
Idle  
L
PRECHARGE  
H
H
L
H
H
L
H
H
H
L
READ (Select column and start READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE (Deactivate row in bank or banks)  
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE (Truncate READ burst, start PRECHARGE)  
BURST TERMINATE  
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE (Truncate WRITE burst, start PRECHARGE)  
BURST TERMINATE  
Row Active  
Read  
(Auto Precharge  
Disabled)  
L
H
H
L
L
H
H
9
H
L
L
10  
10  
8
Write  
(Auto Precharge  
Disabled)  
H
L
9
NOTES:  
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met (if the previous  
state was self refresh).  
2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are those  
allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.  
3. Current state definitions:  
Idle:  
The bank has been precharged, and tRP has been met.  
Row Active:  
A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no  
register accesses are in progress.  
Read:  
Write:  
A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been  
terminated.  
A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been  
terminated.  
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands,  
or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable  
commands to the other bank are determined by its current state and Truth Table 3, and according to Truth Table 4.  
Precharging:  
Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the  
bank will be in the idle state.  
Row Activating:  
Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the  
bank will be in the row active state.  
Read w/ Auto  
Precharge Enabled:  
Starts with registration of a READ command with auto precharge enabled and ends when tRP has  
been met. Once tRP is met, the bank will be in the idle state.  
Write w/ Auto  
Precharge Enabled:  
Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has  
been met. Once tRP is met, the bank will be in the idle state.  
(continued on next page)  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD2M32  
Rev. 1.0 1/08  
23  
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