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AS4SD2M32DGX-6XT 参数 Datasheet PDF下载

AS4SD2M32DGX-6XT图片预览
型号: AS4SD2M32DGX-6XT
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32× 4银行( 64 MB) SDRAM同步 [512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 52 页 / 1943 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD2M32  
Austin Semiconductor, Inc.  
*Stresses greater than those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at  
these or any other conditions above those indicated in the  
operation section of this specification is not implied. Exposure  
to absolute maximum rating conditions for extended periods  
may affect reliability.  
**Junction temperature depends upon package type, cycle time,  
loading, ambient temperature and airflow, and humidity (plas-  
tics).  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on VDD, VDDQ Supply  
RelativetoVSS...................................................-1Vto+4.6V  
Voltage on Inputs, NC or I/O Pins  
RelativetoVSS...................................................-1Vto+4.6V  
OperatingTemperature,TA (IT)..................................-40°C to +85°C  
OperatingTemperature, TA (ET)..............................-45°C to +105°C  
OperatingTemperature,TA (XT)..............................-55°C to +125°C  
StorageTemperature (plastic)..................................-55°C to +150°C  
Power Dissipation...........................................................................1W  
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS1,5,6  
(VDD, VDDQ = +3.3V ±0.3V)  
PARAMETER  
SYMBOL  
, V  
MIN  
MAX  
UNITS  
NOTES  
Supply Voltage  
V
Q
3
3.6  
V
DD DD  
Input High Voltage: Logic 1; All inputs  
Input Low Voltage: Logic 0; All inputs  
V
2.2  
V
+ 0.3  
V
V
22  
22  
IH  
DD  
V
-0.3  
0.8  
IL  
I
Input Leakage Current: Any input 0V < V < V  
IN  
DD  
I
-5  
-5  
5
5
μA  
μA  
(All other pins not under test = 0V)  
Output Leakage Current: DQs are disabled:  
I
OZ  
0V < V  
< V  
Q
OUT  
DD  
Output Levels:  
Output High Voltage (I  
V
2.4  
---  
---  
V
V
OH  
= -4mA)  
= 4mA)  
OUT  
OUT  
Output Low Voltage (I  
V
0.4  
OL  
IDD SPECIFICATIONS AND CONDITIONS1,5,6,11,13 (VDD, VDDQ = +3.3V ±0.3V)  
PARAMETER  
Operating Current: Active Mode;  
Burst = 2; READ or WRITE; t = t (MIN)  
SYMBOL MAX (-6)  
UNITS NOTES  
3, 18,  
mA  
I
150  
8
DD1  
DD2  
19, 32  
RC  
RC  
Standby Current: Power-Down Mode;  
All banks idle; CKE = LOW  
I
mA  
mA  
32  
Standby Current: Active Mode;  
3, 12,  
CKE = HIGH; CS\ = HIGH; All banks active after t  
No accesses in progress  
met;  
I
8
RCD  
DD3  
19, 32  
Operating Current: Burst Mode; Continuous Burst;  
READ or WRITE: All banks active  
3, 18,  
I
I
185  
300  
mA  
mA  
DD4  
19, 32  
t
= t  
(MIN)  
3, 12,  
18, 19,  
32, 33  
RFC  
RFC  
DD5  
Auto Refresh Current  
CS\ = HIGH; CKE = HIGH  
t
= 7.81 µs  
I
I
6
1
mA  
mA  
RFC  
DD6  
SELF REFRESH CURRENT: CKE < 0.2V  
4, 35  
DD7  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD2M32  
Rev. 1.0 1/08  
27  
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