SDRAM
AS4SD2M32
Austin Semiconductor, Inc.
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow, and humidity (plas-
tics).
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, VDDQ Supply
RelativetoVSS...................................................-1Vto+4.6V
Voltage on Inputs, NC or I/O Pins
RelativetoVSS...................................................-1Vto+4.6V
OperatingTemperature,TA (IT)..................................-40°C to +85°C
OperatingTemperature, TA (ET)..............................-45°C to +105°C
OperatingTemperature,TA (XT)..............................-55°C to +125°C
StorageTemperature (plastic)..................................-55°C to +150°C
Power Dissipation...........................................................................1W
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS1,5,6
(VDD, VDDQ = +3.3V ±0.3V)
PARAMETER
SYMBOL
, V
MIN
MAX
UNITS
NOTES
Supply Voltage
V
Q
3
3.6
V
DD DD
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
V
2.2
V
+ 0.3
V
V
22
22
IH
DD
V
-0.3
0.8
IL
I
Input Leakage Current: Any input 0V < V < V
IN
DD
I
-5
-5
5
5
μA
μA
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled:
I
OZ
0V < V
< V
Q
OUT
DD
Output Levels:
Output High Voltage (I
V
2.4
---
---
V
V
OH
= -4mA)
= 4mA)
OUT
OUT
Output Low Voltage (I
V
0.4
OL
IDD SPECIFICATIONS AND CONDITIONS1,5,6,11,13 (VDD, VDDQ = +3.3V ±0.3V)
PARAMETER
Operating Current: Active Mode;
Burst = 2; READ or WRITE; t = t (MIN)
SYMBOL MAX (-6)
UNITS NOTES
3, 18,
mA
I
150
8
DD1
DD2
19, 32
RC
RC
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
I
mA
mA
32
Standby Current: Active Mode;
3, 12,
CKE = HIGH; CS\ = HIGH; All banks active after t
No accesses in progress
met;
I
8
RCD
DD3
19, 32
Operating Current: Burst Mode; Continuous Burst;
READ or WRITE: All banks active
3, 18,
I
I
185
300
mA
mA
DD4
19, 32
t
= t
(MIN)
3, 12,
18, 19,
32, 33
RFC
RFC
DD5
Auto Refresh Current
CS\ = HIGH; CKE = HIGH
t
= 7.81 µs
I
I
6
1
mA
mA
RFC
DD6
SELF REFRESH CURRENT: CKE < 0.2V
4, 35
DD7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD2M32
Rev. 1.0 1/08
27
AUSTIN [ AUSTIN SEMICONDUCTOR ]
