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AS4SD2M32DGX-6XT 参数 Datasheet PDF下载

AS4SD2M32DGX-6XT图片预览
型号: AS4SD2M32DGX-6XT
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32× 4银行( 64 MB) SDRAM同步 [512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 52 页 / 1943 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD2M32  
Austin Semiconductor, Inc.  
TRUTH TABLE 4: CURRENT STATE BANK n, COMMAND TO BANK m1,2,3,4,5,6  
CURRENT STATE CS\ RAS\ CAS\ WE\  
COMMAND (ACTION)  
COMMAND INHIBIT (NOP/Continue previous operation)  
NO OPERATION (NOP/Continue previous operation)  
Any Command Otherwise Allowed to Bank m  
ACTIVE (Select and active row)  
READ (Select column and start READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
NOTES  
H
L
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
X
L
H
H
L
X
H
X
H
L
X
H
X
H
H
L
Any  
Idle  
Row Activating,  
Active, or  
Precharging  
7
7
L
H
H
L
L
L
H
H
L
ACTIVE (Select and active row)  
Read  
(Auto Precharge  
Disabled)  
H
H
L
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
7, 10  
7, 11  
9
L
H
H
L
L
L
H
H
L
ACTIVE (Select and active row)  
Write  
(Auto Precharge  
Disabled)  
H
H
L
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE  
7, 12  
7, 13  
9
L
H
H
L
L
L
H
H
L
ACTIVE (Select and active row)  
Read  
(with Auto  
Precharge)  
H
H
L
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
7, 8, 14  
7, 8, 15  
9
L
H
H
L
L
H
L
L
H
H
L
ACTIVE (Select and active row)  
Write  
(with Auto  
Precharge)  
H
H
L
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE  
7, 8, 16  
7, 8, 17  
9
L
NOTES:  
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met (if the previous  
state was self refresh).  
2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the commands shown  
are those allowed to be issued to bank m (assuming bank m is in such a state that the given command is allowable). Exceptions  
are covered in the notes below.  
3. Current state definitions:  
Idle:  
The bank has been precharged, and tRP has been met.  
Row Active:  
A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no  
register accesses are in progress.  
Read:  
Write:  
A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been  
terminated.  
A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been  
terminated.  
Read w/ Auto  
Precharge Enabled:  
Starts with registration of a READ command with auto precharge enabled and ends when tRP has  
been met. Once tRP is met, the bank will be in the idle state.  
Write w/ Auto  
Precharge Enabled:  
Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has  
been met. Once tRP is met, the bank will be in the idle state.  
4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.  
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state  
only.  
6. All states and sequences not shown are illegal or reserved.  
AS4SD2M32  
(continued on next page)  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
Rev. 1.0 1/08  
25  
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