AS4LC4M4 883C
4 MEG x 4 DRAM
AUSTIN SEMICONDUCTOR, INC.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 6, 7, 8, 9, 10, 11, 12, 13) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
-6
-7
-8
SYM
tOFF
MIN
0
MAX
MIN
0
MAX
MIN
0
MAX UNITS NOTES
Output buffer turn-off delay
15
15
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
O
?
E
/
setup prior to RAS during HIDDEN REFRESH cycle tORD
0
0
0
19
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS
tPC
tPRWC
tRAC
tRAD
tRAH
tRAL
tRAS
tRASP
tRC
30
75
35
85
40
90
60
30
70
35
80
40
13
17
RA
S to column-address delay time
15
10
30
60
60
110
16
0
15
10
35
70
70
130
16
0
15
10
40
80
80
150
20
0
Row-address hold time
Column-address to RAS lead time
RA
S pulse width
10,000
10,000
10,000
100,00
RAS pulse width (EDO PAGE MODE)
Random READ or WRITE cycle time
RAS to CAS delay time
100,000
100,000
tRCD
tRCH
tRCS
tREF
tRP
tRPC
tRRH
tRSH
tRWC
tRWD
tRWL
tT
tWCH
tWCR
tWCS
tWHZ
tWP
tWPZ
tWRH
tWRP
45
32
50
32
60
32
16
18
Read command hold time (referenced to CAS)
Read command setup time
0
0
0
Refresh period (2,048 cycles)
RA
/
40
5
50
5
60
5
RA
/
Read command hold time (referenced to RAS)
RAS hold time
0
0
0
18
20
13
150
80
15
2
15
180
90
15
2
15
200
105
20
2
READ WRITE cycle time
RAS to WE delay time
Write command to RAS lead time
Transition time (rise or fall)
30
14
30
16
30
20
Write command hold time
10
40
0
12
56
0
15
60
0
Write command hold time (referenced to RAS)
W
E command setup time
20
Output disable delay from WE
Write command pulse width
0
0
0
10
10
10
10
12
12
10
10
15
15
10
10
W
/
W
/
24
24
?W/
AS4LC4M4
Rev. 11/97
DS000022
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.
2-79
AUSTIN [ AUSTIN SEMICONDUCTOR ]
