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AS4LC4M4883C 参数 Datasheet PDF下载

AS4LC4M4883C图片预览
型号: AS4LC4M4883C
PDF下载: 下载PDF文件 查看货源
内容描述: MEG 4 ×4的DRAM 3.3V , EDO页模式 [4 MEG x 4 DRAM 3.3V, EDO PAGE MODE]
分类和应用: 动态存储器
文件页数/大小: 20 页 / 188 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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AUSTIN SEMICONDUCTOR, INC.
AS4LC4M4 883C
4 MEG x 4 DRAM
FUNCTIONAL BLOCK DIAGRAM
WE
CAS
DATA-IN
BUFFER
4
NO. 2 CLOCK
GENERATOR
DATA-OUT
BUFFER
4
4
DQ1
DQ2
DQ3
DQ4
OE
COLUMN-
ADDRESS
BUFFER(11)
REFRESH
CONTROLLER
COMPLEMENT
SELECT
11
11
ROW-
ADDRESS
BUFFERS (11)
ROW
DECODER
ROW SELECT
(2 of 4096)
2048
2048
2048
2048
11
2048
4096 x 1024 x 4
MEMORY
ARRAY
RAS
NO. 1 CLOCK
GENERATOR
ROW TRANSFER
ROW TRANSFER
(1 OF 2)
(1 OF 2)
V
DD
Vss
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
11
10
1
COLUMN
DECODER
1024
4
SENSE AMPLIFIERS
I/O GATING
1024
REFRESH
COUNTER
TRUTH TABLE
ADDRESSES
FUNCTION
Standby
READ
EARLY WRITE
READ WRITE
EDO-PAGE-MODE
READ
EDO-PAGE-MODE
EARLY-WRITE
EDO-PAGE-MODE
READ-WRITE
HIDDEN
REFRESH
?
R
?
A
/
S-ONLY REFRESH
CBR REFRESH
AS4LC4M4
Rev. 11/97
DS000022
DATA-IN/OUT
DQ1-DQ4
High-Z
Data-Out
Data-In
Data-Out, Data-In
Data-Out
Data-Out
Data-In
Data-In
Data-Out
Data-Out, Data-In
Data-Out, Data-In
Data-Out
Data-In
High-Z
High-Z
?
R
?
A
/
S
H
L
L
L
1st Cycle
2nd Cycle
1st Cycle
2nd Cycle
Any Cycle
1st Cycle
2nd Cycle
READ
WRITE
L
L
L
L
L
L
L
L>H>L
L>H>L
L
H>L
?
C
?
A
/
S
H>X
L
L
L
H>L
H>L
H>L
H>L
L>H
H>L
H>L
L
L
H
L
?
W
/
E
X
H
L
H>L
H
H
L
L
H
H>L
H>L
H
L
X
H
?
O
/
E
X
L
X
L>H
L
L
X
X
L
L>H
L>H
L
X
X
X
t
R
t
C
X
ROW
ROW
ROW
ROW
n/a
ROW
n/a
n/a
ROW
n/a
ROW
ROW
ROW
X
X
COL
COL
COL
COL
COL
COL
COL
n/a
COL
COL
COL
COL
n/a
X
2-76
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.