iPEM
2.1 Gb SDRAM-DDR2
Austin Semiconductor, Inc.
AS4DDR232M64PBG
NOTES:
3 . Wait a minimum of 400ns, then issue a PRECHARGE ALL command/
4 . Issue an LOAD MODE command to the EMR(2). (To issue an
EMR(2) command, provide LOW to BA0, provide HIGH to BA1.)
5. Issue a LOAD MODE command to the EMR(3). (To issue an EMR(3)
command, provide HIGH to BA0 and BA1.)
6. Issue an LOAD MODE command to the EMR to enable DLL. To
issue a DLL ENABLE command, provide LOW to BA1 and A0,
provide HIGH to BA0. Bits E7, E8, and E9 can be set to “0” or “1”;
Micron recommends setting them to “0.”
1 . Applying power; if CKE is maintained below 0.2 x VCCQ, outputs
remain disabled. To guarantee RTT (ODT resistance) is off, VREF
must be valid and a low level must be applied to the ODT ball (all
other inputs may be undefined, I/Os and outputs must be less
than VCCQ during voltage ramp time to avoid DDR2 SDRAM device
latch-up). At least one of the following two sets of conditions (A
or B) must be met to obtain a stable supply state (stable supply
defined as VCC, VCCQ,VREF, and VTT are between their
minimum and maximum values as stated in DC Operating
Conditions table):
A. (single power source) The VCC voltage ramp from 300mV to
VCC(MIN) must take no longer than 200ms; during the VCC
voltage ramp, |VCC
ramping is complete (when VCCQ crosses VCC (MIN), DC
Operating Conditions table specifications apply.
• VCC, VCCQ are driven from a single power converter output
• VTT is limited to 0.95V MAX
• VREF tracks VCCQ/2; VREF must be within 3V with respect
to VCCQ/2 during supply ramp time.
7. Issue
clock input
a
LOAD MODE command for DLL RESET. 200 cycles of
is required to lock the DLL. (To issue a DLL RESET,
provide HIGH to A8 and provide LOW to BA1, and BA0.) CKE
must be HIGH the entire time.
8. Issue PRECHARGE ALL command.
9. Issue two or more REFRESH commands, followed by a dummy
WRITE.
- VCCQ| < 0.3V. Once supply voltage
10. Issue
a LOAD MODE command with LOW to A8 to initialize
device operation (i.e., to program operating parameters without
resetting the DLL).
11. Issue a LOAD MODE command to the EMR to enable OCD default
by setting bits E7, E8, and E9 to “1,” and then setting all other
desired parameters.
12. Issue a LOAD MODE command to the EMR to enable OCD exit
by setting bits E7, E8, and E9 to “0,” and then setting all other
desired parameters.
• VCCQ > VREF at all times
B. (multiple power sources) VCC e” VCCQ must be maintained
during supply voltage ramping, for both AC and DC levels, until
supply voltage ramping completes (VCCQ crosses VCC [MIN]).
Once supply voltage ramping is complete, DC Operating
Conditions table specifications apply.
• Apply VCC before or at the same time as VCCQ; VCC voltage
ramp time must be
300mV to VCC (MIN)
• Apply VCCQ before or at the same time as VTT; the VCCQ
voltage ramp time from when VCC (MIN) is achieved to when
VCCQ (MIN) is achieved must be
ramping, current can be supplied from VCC through the device
to VCCQ
• VREF must track VCCQ/2, VREF must be within 0.3V with
respect to VCCQ/2 during supply ramp time; VCCQ > VREF
must be met at all times
13. Issue
a LOAD MODE command with LOW to A8 to initialize
device operation (i.e., to program operating parameters without
resetting the DLL).
14. Issue a LOAD MODE command to the EMR to enable OCD default
by setting bits E7,E8, and E9 to “1,” and then setting all other
desired parameters.
15. Issue a LOAD MODE command to the EMR to enable OCD exit
by setting bits E7, E8, and E9 to “0,” and then setting all other
desired parameters. The DDR2 SDRAM is now initialized and
ready for normal operation 200 clocks after DLL RESET (in
step 7).
< 200ms from when VCC ramps from
< 500ms; while VCC is
•
Apply VTT; The VTT voltage ramp time from when VCCQ
(MIN) is achieved to when VTT (MIN) is achieved must be no
greater than 500ms
2. For a minimum of 200µs after stable power and clock (CK, CK#),
apply NOP or DESELECT commands and take CKE HIGH.
Austin Semiconductor, Inc.
● Austin, Texas ● 512.339.1188 ● www.austinsemiconductor.com
AS4DDR232M64PBG
Rev. 1.3 6/09
7