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AS4DDR232M64PBGR-5/IT 参数 Datasheet PDF下载

AS4DDR232M64PBGR-5/IT图片预览
型号: AS4DDR232M64PBGR-5/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx64 DDR2 SDRAM集成塑封微电路 [32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 内存集成电路动态存储器双倍数据速率
文件页数/大小: 28 页 / 363 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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iPEM  
2.1 Gb SDRAM-DDR2  
Austin Semiconductor, Inc.  
AS4DDR232M64PBG  
CAS LATENCY (CL)  
DDR2 SDRAM also supports a feature called posted ꢁAS  
additive latency (AL). This feature allows the READ command  
to be issued prior to tRꢁD (MIN) by delaying the  
The ꢁAS latency (ꢁL) is defined by bits M4-M6, as shown  
in Figure 5. ꢁL is the delay, in clock cycles, between the  
registration of a READ command and the availability of the  
first bit of output data. The ꢁL can be set to 3, 4, 5, or 6  
clocks, depending on the speed grade option being used.  
internal command to the DDR2 SDRAM by AL clocks.  
Examples of ꢁL = 3 and ꢁL = 4 are shown in Figure 6; both  
assume AL = 0. If a READ command is registered at clock  
edge n, and the ꢁL is m clocks, the data will be available  
nominally coincident with clock edge n+m (this assumes  
AL = 0).  
DDR2 SDRAM does not support any half-clock latencies.  
Reserved states should not be used as unknown operation  
or incompatibility with future versions may result.  
FIGURE 6 - CAS LATENCY (CL)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CK#  
CK  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
DQS, DQS#  
D
OUT  
D
OUT  
D
OUT  
DOUT  
n + 3  
DQ  
n
n + 1  
n + 2  
CL = 3 (AL = 0)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CK#  
CK  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
DQS, DQS#  
D
OUT  
D
OUT  
D
OUT  
DOUT  
n + 3  
DQ  
n
n + 1  
n + 2  
CL = 4 (AL = 0)  
Burst length = 4  
Posted CAS# additive latency (AL) = 0  
t
t t  
AC, DQSCK, and DQSQ  
TRANSITIONING DATA  
DON’T CARE  
Shown with nominal  
Austin Semiconductor, Inc.  
Austin, Texas 512.339.1188 www.austinsemiconductor.com  
AS4DDR232M64PBG  
Rev. 1.3 6/09  
10  
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