COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016J
ERASE AND PROGRAMMING PERFORMANCE
Typ1
0.5
16
6
Max2
Parameter
Sector Erase Time
Unit
s
Comments
Excludes 00h programming
prior to erasure4
10
Chip Erase Time
s
Byte Programming Time
Word Programming Time
Excludes system level
overhead5
µs
µs
6
150
Notes:
1.Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles, checkerboard data pattern.
2.Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3.The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program
faster than the maximum program times listed.
4.In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5.System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 9
on page 21 for further information on command definitions.
6.The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup Package
Typ
Max
Unit
CIN
VIN=0
VOUT=0
VIN=0
Input Capacitance
TSOP
TSOP
TSOP
6
7.5
pF
COUT
CIN2
Notes:
Output Capacitance
8.5
7.5
12
9
pF
pF
Control Pin Capacitance
1. Samples, not 100% tested.
2. Test conditions TA =2ꢀo C, f=1.0 MHz
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS29LV016J
Rev. 0.0 02/09
38
AUSTIN [ AUSTIN SEMICONDUCTOR ]
