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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
AC CHARACTERISTICS  
Read Status Data (last two cycles)  
Program Command Sequence (last two cycles)  
tAS  
tWC  
Addresses  
555h  
PA  
PA  
PA  
tAH  
CE#  
OE#  
tCH  
tWHWH1  
tWP  
WE#  
Data  
tWPH  
tCS  
tDS  
tDH  
PD  
A0h  
DOUT  
Status  
tBUSY  
tRB  
RY/BY#  
VCC  
tVCS  
Notes:  
1. PA = program address, PD = program data, DOUT is the true data at the program address.  
2. Illustration shows device in word mode.  
Figure 16. Program Operation Timings  
Erase Command Sequence (last two cycles)  
Read Status Data  
VA  
VA  
tAS  
SA  
tWC  
Addresses  
CE#  
2AAh  
555h for chip erase  
tAH  
tCH  
OE#  
tWP  
WE#  
tWPH  
tWHWH2  
tCS  
tDS  
tDH  
In  
Data  
Complete  
55h  
30h  
Progress  
10 for Chip Erase  
tBUSY  
tRB  
RY/BY#  
VCC  
tVCS  
Notes:
1.SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status  
on page 22).  
2.Illustration shows device in word mode.  
Figure 17. Chip/Sector Erase Operation Timings  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
33  
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