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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
AC CHARACTERISTICS  
CE#  
The falling edge of the last W  
WE#  
BYTE#  
tSET  
(tAS  
)
tHOLD (tAH  
)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.  
Figure 15. BYTE# Timings for Write Operations  
Erase / Program Operations  
Parameter  
Speed Options  
JEDEC  
Std  
Description  
Test Setup  
70  
55  
Unit  
Write Cycle Time1  
Address Setup Time  
Address Hold Time  
Data Setup Time  
Data Hold Time  
tAVAV  
tWC  
70  
55  
tAVWL  
tWLAX  
tDVWH  
tWHDX  
tAS  
tAH  
0
45  
tDS  
35  
35  
tDH  
tOES  
0
0
Output Enagle Setup Time  
Min  
ns  
Read Recovery Time Before Write,  
(OE# High to WE# Low)  
tGHWL  
tGHWL  
0
tELWL  
tWHEH  
tWLWH  
tWHWL  
tCS  
tCH  
CE# Setup Time  
0
0
CE# Hold Time  
tWP  
Write Pulse Width  
35  
25  
20  
6
tWPH  
tSR/W  
Write Pulse Width High  
Latency Between Read and Write Operations  
Byte  
Programming Operation2  
tWHWH1  
tWHWH2  
tWHWH1  
µs  
Typ  
6
Word  
Sector Erase Operation2  
VCC Setup Time1  
tWHWH2  
tVCS  
0.5  
50  
0
sec  
µs  
Min  
tRB  
Recovery Time from RY / BY#  
Program / Erase Valid to RY / BY# Delay  
ns  
tBUSY  
90  
Max  
Notes:  
1. Not 100% Tested.  
2. See Erase and Programming Performance on page 38 for more information.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
32  
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