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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
AC CHARACTERISTICS  
tRC  
Addresses  
CE#  
VA  
tACC  
tCE  
VA  
VA  
tCH  
tOE  
OE#  
WE#  
tOEH  
tDF  
tOH  
High Z  
DQ7  
Valid Data  
Complement  
Complement  
True  
High Z  
DQ0–DQ6  
Status Data  
True  
Valid Data  
Status Data  
tBUSY  
RY/BY#  
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and  
array data read cycle.  
Figure 18. Data# Polling Timings (During Embedded Algorithms)  
tRC  
Addresses  
CE#  
VA  
tACC  
tCE  
VA  
VA  
VA  
tCH  
tOE  
OE#  
WE#  
tOEH  
tDF  
tOH  
High Z  
DQ6/DQ2  
RY/BY#  
Valid Status  
(first read)  
Valid Status  
Valid Status  
Valid Data  
(second read)  
(stops toggling)  
tBUSY  
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last  
status read cycle, and array data read cycle.  
Figure 19. Toggle Bit Timings (During Embedded Algorithms)  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
34  
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