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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
AC CHARACTERISTICS  
V
ID  
V
IH  
RESET#  
SA, A6,  
A1, A0  
Valid*  
Valid*  
Valid*  
Status  
Sector Protect/Unprotect  
Verify  
40h  
Data  
60h  
60h  
Sector Protect: 150 μs  
Sector Unprotect: 15 ms  
1 μs  
CE#  
WE#  
OE#  
Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.  
Figure 22. Sector Protect/Unprotect Timing Diagram  
Alternate CE# Controlled Erase / Program Operations  
Parameter  
Speed Options  
JEDEC  
Std  
Description  
Test Setup  
70  
55  
Unit  
Write Cycle Time1  
Address Setup Time  
Address Hold Time  
Data Setup Time  
Data Hold Time  
tAVAV  
tAVEL  
tELAX  
tDVEH  
tEHDX  
tWC  
70  
55  
tAS  
tAH  
0
45  
35  
45  
35  
tDS  
tDH  
tOES  
0
0
Output Enagle Setup Time  
Min  
ns  
Read Recovery Time Before Write,  
(OE# High to OE# Low)  
tGHEL  
tGHEL  
0
tWLEL  
tEHWH  
tELEH  
tEHEL  
tWS  
tWH  
WE# Setup Time  
0
0
WE# Hold Time  
tCP  
CE# Pulse Width  
35  
35  
tCPH  
tSR/W  
CE# Pulse Width High  
Latency Between Read and Write Operations  
25  
20  
6
Byte  
Programming Operation2  
Sector Erase Operation2  
tWHWH1  
tWHWH2  
µs  
tWHWH1  
tWHWH2  
Typ  
6
Word  
0.5  
sec  
Notes:  
1. Not 100% Tested.  
2. See Erase and Programming Performance on page 38 for more information.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
36  
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