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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
AC CHARACTERISTICS  
555 for program  
2AA for erase  
PA for program  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tAS  
tAH  
tWH  
WE#  
tGHEL  
OE#  
tWHWH1 or 2  
tCP  
CE#  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
Data  
tRH  
A0 for program  
55 for erase  
PD for program  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes:  
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data  
written to the device.  
2. Figure indicates the last two bus cycles of the command sequence.  
3. Word mode address used as an example.  
Figure 23. Alternate CE# Controlled Write Operation Timings  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
37  
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