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AT45DB011B-CC 参数 Datasheet PDF下载

AT45DB011B-CC图片预览
型号: AT45DB011B-CC
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位2.7伏唯一的数据FLASH [1-MEGABIT 2.7 VOLT ONLY DATA FLASH]
分类和应用:
文件页数/大小: 32 页 / 319 K
品牌: ATMEL [ ATMEL ]
 浏览型号AT45DB011B-CC的Datasheet PDF文件第2页浏览型号AT45DB011B-CC的Datasheet PDF文件第3页浏览型号AT45DB011B-CC的Datasheet PDF文件第4页浏览型号AT45DB011B-CC的Datasheet PDF文件第5页浏览型号AT45DB011B-CC的Datasheet PDF文件第7页浏览型号AT45DB011B-CC的Datasheet PDF文件第8页浏览型号AT45DB011B-CC的Datasheet PDF文件第9页浏览型号AT45DB011B-CC的Datasheet PDF文件第10页  
BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE: A previously  
erased page within main memory can be programmed with the contents of the buffer. An 8-bit  
opcode of 88H is followed by the six reserved bits, nine address bits (PA8-PA0) that specify  
the page in the main memory to be written, and nine additional don’t care bits. When a low-to-  
high transition occurs on the CS pin, the part will program the data stored in the buffer into the  
specified page in the main memory. It is necessary that the page in main memory that is being  
programmed has been previously erased. The programming of the page is internally self-  
timed and should take place in a maximum time of tP. During this time, the status register will  
indicate that the part is busy.  
Successive page programming operations without doing a page erase are not recommended.  
In other words, changing bytes within a page from a “1” to a “0” during multiple page program-  
ming operations without erasing that page is not recommended.  
PAGE ERASE: The optional Page Erase command can be used to individually erase any  
page in the main memory array allowing the Buffer to Main Memory Page Program without  
Built-in Erase command to be utilized at a later time. To perform a Page Erase, an opcode of  
81H must be loaded into the device, followed by six reserved bits, nine address bits (PA8-  
PA0), and nine don’t care bits. The nine address bits are used to specify which page of the  
memory array is to be erased. When a low-to-high transition occurs on the CS pin, the part will  
erase the selected page to 1s. The erase operation is internally self-timed and should take  
place in a maximum time of tPE. During this time, the status register will indicate that the part is  
busy.  
BLOCK ERASE: A block of eight pages can be erased at one time allowing the Buffer to Main  
Memory Page Program without Built-in Erase command to be utilized to reduce programming  
times when writing large amounts of data to the device. To perform a Block Erase, an opcode  
of 50H must be loaded into the device, followed by six reserved bits, six address bits (PA8-  
PA3), and 12 don’t care bits. The six address bits are used to specify which block of eight  
pages is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase  
the selected block of eight pages to 1s. The erase operation is internally self-timed and should  
take place in a maximum time of tBE. During this time, the status register will indicate that the  
part is busy.  
Block Erase Addressing  
PA8  
PA7  
PA6  
PA5  
PA4  
0
PA3  
0
PA2  
X
PA1  
X
PA0  
X
Block  
0
0
0
0
0
1
2
3
0
0
0
0
0
1
X
X
X
0
0
0
0
1
0
X
X
X
0
0
0
0
1
1
X
X
X
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
60  
61  
62  
63  
6
AT45DB011B  
1984H–DFLSH–10/04  
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