AS5050
Datasheet - Electrical Characteristics
6 Electrical Characteristics
6.1 Operating Conditions
Table 3. Operating Conditions
Parameter
Conditions
Min
Typ
Max
Units
DC supply voltage
VDD
3.0
3.6
V
Peripheral supply voltage1
Input pin voltage
VDDp
1.8
VDD
V
VIN
-0.3
-40
2.2
15
VDDp +0.3
V
Ambient operating temperature
85
4.7
33
°C
µF
Ω
Power supply filter, pin VDD
(refer to Power Supply Filter on page 6)
External component
Ceramic capacitor, pin VDDp to VSS
100
nF
1. VDDp must not exceed VDD (protection diode between VDDp and VDD)
6.2 System Parameters
Table 4. System Parameters
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Average current @ 10ms readout rate1
Average current @ 100ms readout rate
Maximum readout rate
I_10
0.4
mA
Operating current
I_100
I_max
40
µA
mA
8.5
Time between READ ANGLE command and
INTERRUPT
Readout rate
320
430
µs
Power down current
Lateral displacement range
Magnetic field strength
Serial interface
Power down current
3
µA
mm
mT
Rd
BZ
Centre of the magnet to the centre of the die
-
± 0.5
80
30
-
SPI mode 1 (CPOL = 0 / CPHA =1)
10
Resolution; angle
bit
Best-fit line - over supply, displacement and
temperature – but without quantization
INL
-1.41
1.41
degree
IC package
QFN 4x4x0.85
1. Without the time for the SPI interface
6.3 DC/AC Characteristics
Digital pads: MISO, MOSI, SCK, SS/, EN_INT/, INT/, Wire_mode
Table 5. DC/AC Characteristics
Symbol
VIH
Parameter
Conditions
Min
Typ
Max
Units
V
High level input voltage
Low level input voltage
Low level input voltage
Input leakage current
High level output voltage
Low level output voltage
Capacitive load
0.7 * VDDp
VIL
VDDp > 2.7V
VDDp < 2.7V
0.3 * VDDp
0.25 * VDDp
1
V
VIL
V
ILEAK
VOH
VOL
CL
µA
V
VDDp - 0.5
VSS + 0.4
35
V
pF
www.ams.com/AS5050
Revision 1.16
5 - 25
AMSCO [ AMS(艾迈斯) ]
