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AM29F016D-70EF 参数 Datasheet PDF下载

AM29F016D-70EF图片预览
型号: AM29F016D-70EF
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位) CMOS 5.0伏只,统一部门快闪记忆体 [16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory]
分类和应用:
文件页数/大小: 43 页 / 1326 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
Any commands written to the chip during the Embed-  
Timer” section.) The time-out begins from the rising  
edge of the final WE# pulse in the command sequence.  
ded Erase algorithm are ignored. Note that a hardware  
reset during the chip erase operation immediately ter-  
minates the operation. The Chip Erase command  
sequence should be reinitiated once the device has re-  
turned to reading array data, to ensure data integrity.  
Once the sector erase operation has begun, only the  
Erase Suspend command is valid. All other commands  
are ignored. Note that a hardware reset during the  
sector erase operation immediately terminates the op-  
eration. The Sector Erase command sequence should  
be reinitiated once the device has returned to reading  
array data, to ensure data integrity.  
The system can determine the status of the erase  
operation by using DQ7, DQ6, DQ2, or RY/BY#. See  
“Write Operation Status” for information on these  
status bits. When the Embedded Erase algorithm is  
complete, the device returns to reading array data  
and addresses are no longer latched.  
When the Embedded Erase algorithm is complete, the  
device returns to reading array data and addresses are  
no longer latched. The system can determine the sta-  
tus of the erase operation by using DQ7, DQ6, DQ2, or  
RY/BY#. Refer to “Write Operation Status” for informa-  
tion on these status bits.  
Figure 3 illustrates the algorithm for the erase opera-  
tion. See the Erase/Program Operations tables in “AC  
Characteristics” for parameters, and to the Chip/Sector  
Erase Operation Timings for timing waveforms.  
Figure 3 illustrates the algorithm for the erase opera-  
tion. Refer to the Erase/Program Operations tables in  
the “AC Characteristics” section for parameters, and to  
the Sector Erase Operations Timing diagram for timing  
waveforms.  
Sector Erase Command Sequence  
Sector erase is a six bus cycle operation. The sector  
erase command sequence is initiated by writing two un-  
lock cycles, followed by a set-up command. Two  
additional unlock write cycles are then followed by the  
address of the sector to be erased, and the sector  
erase command. The Command Definitions table  
shows the address and data requirements for the sec-  
tor erase command sequence.  
Erase Suspend/Erase Resume Commands  
The Erase Suspend command allows the system to in-  
terrupt a sector erase operation and then read data  
from, or program data to, any sector not selected for  
erasure. This command is valid only during the sector  
erase operation, including the 50 µs time-out period  
during the sector erase command sequence. The  
Erase Suspend command is ignored if written during  
the chip erase operation or Embedded Program algo-  
rithm. Writing the Erase Suspend command during the  
Sector Erase time-out immediately terminates the  
time-out period and suspends the erase operation. Ad-  
dresses are “don’t-cares” when writing the Erase  
Suspend command.  
The device does not require the system to preprogram  
the memory prior to erase. The Embedded Erase algo-  
rithm automatically programs and verifies the sector for  
an all zero data pattern prior to electrical erase. The  
system is not required to provide any controls or tim-  
ings during these operations.  
After the command sequence is written, a sector erase  
time-out of 50 µs begins. During the time-out period,  
additional sector addresses and sector erase com-  
mands may be written. Loading the sector erase buffer  
may be done in any sequence, and the number of sec-  
tors may be from one sector to all sectors. The time  
between these additional cycles must be less than 50  
µs, otherwise the last address and command might not  
be accepted, and erasure may begin. It is recom-  
mended that processor interrupts be disabled during  
this time to ensure all commands are accepted. The in-  
terrupts can be re-enabled after the last Sector Erase  
command is written. If the time between additional sec-  
tor erase commands can be assumed to be less than  
50 µs, the system need not monitor DQ3. Any com-  
mand other than Sector Erase or Erase Suspend  
during the time-out period resets the device to  
reading array data. The system must rewrite the com-  
mand sequence and any additional sector addresses  
and commands.  
When the Erase Suspend command is written during a  
sector erase operation, the device requires a maximum  
of 20 µs to suspend the erase operation. However,  
when the Erase Suspend command is written during  
the sector erase time-out, the device immediately ter-  
minates the time-out period and suspends the erase  
operation.  
After the erase operation has been suspended, the  
system can read array data from or program data to  
any sector not selected for erasure. (The device “erase  
suspends” all sectors selected for erasure.) Normal  
read and write timings and command definitions apply.  
Reading at any address within erase-suspended sec-  
tors produces status data on DQ7–DQ0. The system  
can use DQ7, or DQ6 and DQ2 together, to determine  
if a sector is actively erasing or is erase-suspended.  
See “Write Operation Status” for information on these  
status bits.  
The system can monitor DQ3 to determine if the sector  
erase timer has timed out. (See the “DQ3: Sector Erase  
November 1, 2006 21444E6  
Am29F016D  
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