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EPM1270GT144I4N 参数 Datasheet PDF下载

EPM1270GT144I4N图片预览
型号: EPM1270GT144I4N
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash PLD, 8.1ns, 980-Cell, CMOS, PQFP144, 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, TQFP-144]
分类和应用: LTE输入元件可编程逻辑
文件页数/大小: 108 页 / 1342 K
品牌: ALTERA [ ALTERA CORPORATION ]
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Power-On Reset Circuitry  
Figure 4–4. ESD Protection During Negative Voltage Zap  
I/O  
Source  
D
Gate  
PMOS  
N+  
Drain  
P-Substrate  
G
I/O  
Drain  
S
Gate  
N+  
NMOS  
Source  
GND  
GND  
MAX II devices have POR circuits to monitor VCCINT and VCCIO voltage  
levels during power-up. The POR circuit monitors these voltages,  
triggering download from the non-volatile configuration flash memory  
(CFM) block to the SRAM logic, maintaining tri-state of the I/O pins  
(with weak pull-up resistors enabled) before and during this process.  
When the MAX II device enters user mode, the POR circuit releases the  
I/O pins to user functionality. The POR circuit of the MAX II (except  
MAX IIZ) device continues to monitor the VCCINT voltage level to detect a  
brown-out condition. The POR circuit of the MAX IIZ device does not  
monitor the VCCINT voltage level after the device enters into user mode.  
More details are provided in the following sub-sections.  
Power-On Reset  
Circuitry  
Power-Up Characteristics  
When power is applied to a MAX II device, the POR circuit monitors  
VCCINT and begins SRAM download at an approximate voltage of 1.7 V or  
1.55 V for MAX IIG and MAX IIZ devices. From this voltage reference,  
SRAM download and entry into user mode takes 200 to 450 µs maximum,  
depending on device density. This period of time is specified as tCONFIG in  
the power-up timing section of the DC and Switching Characteristics  
chapter in the MAX II Device Handbook.  
4–6  
Core Version a.b.c variable  
Altera Corporation  
December 2007  
MAX II Device Handbook, Volume 1  
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