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LH28F800BVE-TV85 参数 Datasheet PDF下载

LH28F800BVE-TV85图片预览
型号: LH28F800BVE-TV85
PDF下载: 下载PDF文件 查看货源
内容描述: X8 / X16闪存EEPROM [x8/x16 Flash EEPROM ]
分类和应用: 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 48 页 / 549 K
品牌: ETC [ ETC ]
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LHF80V25  
12  
sharp  
4.1 Read Array Command  
4.4 Clear Status Register Command  
Upon initial device power-up and after exit from deep  
power-down mode, the device defaults to read array mode.  
This operation is also initiated by writing the Read Array  
command. The device remains enabled for reads until  
another command is written. Once the internal WSM has  
started a block erase or word/byte write, the device will  
not recognize the Read Array command until the WSM  
completes its operation unless the WSM is suspended via  
an Erase Suspend or Word/Byte Write Suspend command.  
The Read Array command functions independently of the  
Status register bits SR.5, SR.4, SR.3 or SR.1 are set to  
"1"s by the WSM and can only be reset by the Clear Status  
Register command. These bits indicate various failure  
conditions (see Table 7). By allowing system software to  
reset these bits, several operations (such as cumulatively  
erasing multiple blocks or writing several words/bytes in  
sequence) may be performed. The status register may be  
polled to determine if an error occurred during the  
sequence.  
To clear the status register, the Clear Status Register  
command (50H) is written. It functions independently of  
the applied V Voltage. RP# can be V or V . This  
V
voltage and RP# can be V or V  
.
PP  
IH  
HH  
4.2 Read Identifier Codes Command  
PP  
IH  
HH  
command is not functional during block erase or  
word/byte write suspend modes.  
The identifier code operation is initiated by writing the  
Read Identifier Codes command. Following the command  
write, read cycles from addresses shown in Figure 4  
retrieve the manufacturer and device codes (see Table 5  
for identifier code values). To terminate the operation,  
write another valid command. Like the Read Array  
command, the Read Identifier Codes command functions  
independently of the V voltage and RP# can be V or  
4.5 Block Erase Command  
Erase is executed one block at a time and initiated by a  
two-cycle command. A block erase setup is first written,  
followed by an block erase confirm. This command  
sequence requires appropriate sequencing and an address  
within the block to be erased (erase changes all block data  
to FFFFH). Block preconditioning, erase, and verify are  
handled internally by the WSM (invisible to the system).  
After the two-cycle block erase sequence is written, the  
device automatically outputs status register data when read  
(see Figure 5). The CPU can detect block erase completion  
by analyzing the output data of the RY/BY# pin or status  
register bit SR.7.  
PP  
IH  
V
. Following the Read Identifier Codes command, the  
HH  
following information can be read:  
Table 5. Identifier Codes  
Address  
Data  
Code  
[A -A ] [DQ -DQ ]  
18  
0
7
0
Manufacture Code  
Device Code  
00000H  
00001H  
B0H  
4CH  
When the block erase is complete, status register bit SR.5  
should be checked. If a block erase error is detected, the  
status register should be cleared before system software  
attempts corrective actions. The CUI remains in read  
status register mode until a new command is issued.  
4.3 Read Status Register Command  
The status register may be read to determine when a block  
erase or word/byte write is complete and whether the  
operation completed successfully. It may be read at any  
time by writing the Read Status Register command. After  
writing this command, all subsequent read operations  
output data from the status register until another valid  
command is written. The status register contents are  
latched on the falling edge of OE# or CE#, whichever  
This two-step command sequence of set-up followed by  
execution ensures that block contents are not accidentally  
erased. An invalid Block Erase command sequence will  
result in both status register bits SR.4 and SR.5 being set  
to "1". Also, reliable block erasure can only occur when  
V
=4.5V-5.5V and V =V  
. In the absence of this  
occurs. OE# or CE# must toggle to V before further  
CC  
PP  
PPH1/2  
IH  
high voltage, block contents are protected against erasure.  
reads to update the status register latch. The Read Status  
If block erase is attempted while V V , SR.3 and  
Register command functions independently of the V  
PP  
PPLK  
PP  
SR.5 will be set to "1". Successful block erase for boot  
blocks requires that the corresponding if set, that  
WP#=V or RP#=V . If block erase is attempted to  
voltage. RP# can be V or V  
.
IH  
HH  
IH  
HH  
boot block when the corresponding WP#=V  
or  
IL  
RP#=V , SR.1 and SR.5 will be set to "1". Block erase  
IH  
operations with V <RP#<V  
produce spurious results  
IH  
HH  
and should not be attempted.  
Rev. 1.1  
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