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LH28F800BVE-TV85 参数 Datasheet PDF下载

LH28F800BVE-TV85图片预览
型号: LH28F800BVE-TV85
PDF下载: 下载PDF文件 查看货源
内容描述: X8 / X16闪存EEPROM [x8/x16 Flash EEPROM ]
分类和应用: 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 48 页 / 549 K
品牌: ETC [ ETC ]
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LHF80V25  
14  
sharp  
4.8 Word/Byte Write Suspend Command  
4.10 Block Locking  
The Word/Byte Write Suspend command allows  
word/byte write interruption to read data in other flash  
memory locations. Once the word/byte write process  
starts, writing the Word/Byte Write Suspend command  
requests that the WSM suspend the word/byte write  
sequence at a predetermined point in the algorithm. The  
device continues to output status register data when read  
after the Word/Byte Write Suspend command is written.  
Polling status register bits SR.7 and SR.2 can determine  
when the word/byte write operation has been suspended  
(both will be set to "1"). RY/BY# will also transition to  
This Boot Block Flash memory architecture features two  
hardware-lockable boot blocks so that the kernel code for  
the system can be kept secure while other blocks are  
programmed or erased as necessary.  
4.10.1 V =V for Complete Protection  
PP  
IL  
The V  
programming voltage can be held low for  
PP  
complete write protection of all blocks in the flash device.  
4.10.2 WP#=V for Block Locking  
IL  
High Z. Specification t  
suspend latency.  
defines the word/byte write  
WHRZ1  
The lockable blocks are locked when WP#=V ; any  
IL  
program or erase operation to a locked block will result in  
an error, which will be reflected in the status register. For  
top configuration, the top two boot blocks are lockable.  
For the bottom configuration, the bottom tow boot blocks  
are lockable. Unlocked blocks can be programmed or  
At this point, a Read Array command can be written to  
read data from locations other than that which is  
suspended. The only other valid commands while  
word/byte write is suspended are Read Status Register and  
Word/Byte Write Resume. After Word/Byte Write  
Resume command is written to the flash memory, the  
WSM will continue the word/byte write process. Status  
register bits SR.2 and SR.7 will automatically clear and  
erased normally (Unless V is below V  
).  
PP  
PPLK  
4.10.3 WP#=V for Block Unlocking  
IH  
RY/BY# will return to V . After the Word/Byte Write  
Resume command is written, the device automatically  
OL  
WP#=V unlocks all lockable blocks.  
IH  
outputs status register data when read (see Figure 8). V  
PP  
These blocks can now be programmed or erased.  
must remain at V  
(the same V level used for  
PPH1/2  
PP  
word/byte write) while in word/byte write suspend mode.  
RP# must also remain at V or V (the same RP# level  
WP# controls 2 boot blocks locking and V provides  
protection against spurious writes. Table 6 defines the  
write protection methods.  
PP  
IH  
HH  
used for word/byte write). WP# must also remain at V or  
IL  
V
(the same WP# level used for word/byte write).  
IH  
4.9 Considerations of Suspend  
After the suspend command write to the CUI, read status  
register command has to write to CUI, then status register  
bit SR.6 or SR.2 should be checked for places the device  
in suspend mode.  
Table 6. Write Protection Alternatives  
Operation  
V
RP#  
X
WP#  
X
Effect  
PP  
V
All Blocks Locked.  
All Blocks Locked.  
All Blocks Unlocked.  
2 Boot Blocks Locked.  
All Blocks Unlocked.  
IL  
Block Erase  
or  
V
X
IL  
>V  
V
X
PPLK  
HH  
Word/Byte Write  
V
V
IH  
IL  
V
IH  
Rev. 1.1  
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