欢迎访问ic37.com |
会员登录 免费注册
发布采购

LC5200D 参数 Datasheet PDF下载

LC5200D图片预览
型号: LC5200D
PDF下载: 下载PDF文件 查看货源
内容描述: SANKEN半导体 [SANKEN SEMICONDUCTORS]
分类和应用: 半导体
文件页数/大小: 226 页 / 4860 K
品牌: ETC [ ETC ]
 浏览型号LC5200D的Datasheet PDF文件第125页浏览型号LC5200D的Datasheet PDF文件第126页浏览型号LC5200D的Datasheet PDF文件第127页浏览型号LC5200D的Datasheet PDF文件第128页浏览型号LC5200D的Datasheet PDF文件第130页浏览型号LC5200D的Datasheet PDF文件第131页浏览型号LC5200D的Datasheet PDF文件第132页浏览型号LC5200D的Datasheet PDF文件第133页  
1-2-6 High Voltage 3-Phase Brushless Motor Driver ICs  
SLA6860M Series  
Built-in Overcurrent Protection, Thermal Shutdown, and Overcurrent Limiting Circuits  
Features  
• Built-in boot diode with 210-  
Absolute Maximum Ratings  
(Ta=25°C)  
Conditions  
limiting resistor  
Ratings  
SLA6868M  
Parameter  
Symbol  
Unit  
SLA6866M  
250  
SLA6870M  
• Built-in overcurrent protection circuit (OCP)  
MOSFET Output Breakdown Voltage  
VDSS  
VCC  
VBS  
Io  
500  
V
V
V
A
A
V
CC=15V, I  
Between VCC and COM  
Between V and HS (U, V, W)  
D=100uA, VIN=0V  
• Overcurrent protection with off-time period  
adjustable by an external capacitor  
Control Supply Voltage (VCC  
Control Supply Voltage (Bootstrap)  
Output Current (continuous)  
Output Current (pulse)  
Input Voltage  
)
20  
20  
2.5  
3.75  
B
2.0  
3
3.0  
4.5  
• Overcurrent limiting operation  
Iop  
PW100µs, duty=1%  
HIN1 to HIN3, LIN1 to LIN3  
TC=25℃  
VIN  
PD  
0.5 to +7  
V
• Built-in thermal shutdown (TSD) circuit  
• Externally controllable shutdown operation  
Power Dissipation  
32.8  
3.8  
20 to +100  
150  
40 to +150  
W
/W  
Thermal Resistance (Junction to Case)  
Operating Case Temperature  
Junction Temperature (Power part)  
θj-c  
Tc  
All elements operating  
Tj  
Storage Temperature Tstg  
Recommended Operating Conditions  
Ratings  
Parameter  
Symbol  
SLA6866M  
SLA6868M  
SLA6870M  
Unit  
Conditions  
min.  
13.5  
1.5  
0.5  
typ.  
150  
max.  
200  
16.5  
125  
min.  
13.5  
1.5  
0.5  
typ.  
300  
max.  
400  
16.5  
125  
min.  
13.5  
1.5  
0.5  
typ.  
300  
max.  
Main Supply Voltage  
Control Supply Voltage  
Input Signal Dead Time  
Minimum Input Pulse Width  
Junction Temperature  
VBB  
VCC  
tdead  
Tw  
400  
16.5  
125  
V
V
us  
us  
Between VBB and LS  
Between VCC and COM  
Tj=20to +150℃  
Tj  
Electrical Characteristics  
(Ta=25°C)  
Ratings  
SLA6868M  
typ.  
Parameter  
Symbol  
SLA6866M  
SLA6870M  
typ.  
4.2  
Unit  
Conditions  
min.  
typ.  
4.2  
135  
2.9  
2.1  
10.0  
10.5  
0.5  
11.0  
11.5  
0.5  
135  
115  
20  
1.0  
0.53  
2
1.0  
70  
max.  
min.  
max.  
7
min.  
max.  
7
380  
3.4  
11.0  
11.5  
12.0  
12.5  
150  
130  
1.1  
0.5565  
10  
1.3  
Control Supply Current  
Boot Supply Current  
I
CC  
7
380  
3.4  
11.0  
11.5  
12.0  
12.5  
150  
130  
1.1  
0.5565  
10  
1.3  
4.2  
135  
2.9  
2.1  
10.0  
10.5  
0.5  
11.0  
11.5  
0.5  
135  
115  
20  
1.0  
0.53  
2
1.0  
70  
210  
mA  
uA  
V
V
CC=15V  
B=15V, HIN=5V,  
I
B
380  
3.4  
11.0  
11.5  
12.0  
12.5  
150  
130  
1.1  
0.5565  
10  
1.3  
135  
2.9  
2.1  
10.0  
10.5  
0.5  
11.0  
11.5  
0.5  
135  
115  
20  
1.0  
0.53  
2
VIH  
Input Voltage  
V
VCC=15V  
V
IL  
1.6  
9.0  
9.5  
10.0  
10.5  
120  
100  
0.9  
0.5035  
1.6  
9.0  
9.5  
10.0  
10.5  
120  
100  
0.9  
0.5035  
1.6  
9.0  
9.5  
10.0  
10.5  
120  
100  
0.9  
0.5035  
UVHL  
UVHH  
UVhys  
UVLL  
UVLH  
UVhys  
Between V  
B and U (V, W)  
Undervoltage Lock Out  
V
Hysteresis  
Between VCC and COM  
Hysteresis  
Undervoltage Lock Out  
V
T
DH  
DL  
DHYS  
TRIP  
LIM  
Thermal Protection and  
Release Threshold  
T
T
V
V
VCC=15V  
Overcurrent Protection Trip Voltage  
Current Limiting Reference Voltage  
Overcurrent Protection Retention Time  
Boot Diode Leakage Current  
Boot Diode Forward Voltage  
Boot Diode Reverse Recovery Time  
Boot Diode Series Resistance  
MOSFET Output Breakdown Voltage  
V
V
ms  
µA  
V
ns  
V
V
V
V
V
CC=15V  
CC=15V  
t
p
RC=5V, RR=360k, CC=0.0047uF  
R=500V (250V for the SMA6866M)  
ILBD  
0.8  
70  
210  
V
FBD  
IF  
=0.05A  
Trrb  
Rb  
IF  
/IRP100mA/100mA  
210  
V
DSS  
250  
500  
500  
VCC=15V, I  
D=100uA, VIN=0V  
V
CC=15V, VDS=500V  
MOSFET Output Leakage Current  
MOSFET DC ON Resistance  
MOSFET Diode Forward Voltage  
I
DSS  
1.25  
1.1  
100  
1.5  
1.5  
2.0  
1.0  
100  
2.4  
1.5  
100  
1.7  
1.5  
µA  
(250V for the SLA6866M), VIN=0V  
CC=15V, I =1.0A (1.25A for the SLA6868M,  
and 1.5A for the SLA6870M),VIN=5V  
CC=15V, I =1.0A (1.25A for the SLA6868M,  
and 1.5A for the SLA6870M), VIN=0V  
V
D
R
DS(ON)  
1.4  
V
D
V
SD  
1.0  
V
td(on)  
r  
665  
20  
45  
580  
10  
520  
20  
40  
480  
15  
790  
60  
115  
725  
20  
680  
70  
120  
605  
20  
755  
65  
100  
680  
15  
645  
70  
105  
560  
20  
High Side Switching Time rr  
td(off)  
ns  
ns  
V
BB=300V (150V for the SLA6866M), VCC=15V,  
f  
td(on)  
r  
ID=2.0A (2.5A for the SLA6868M,  
and 3.0A for the SLA6870M), VIN=0 to 5V  
Inductive load  
Low Side Switching Time rr  
td(off)  
f  
ICs  
128  
 复制成功!