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OR2C10A-2BA240I 参数 Datasheet PDF下载

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型号: OR2C10A-2BA240I
PDF下载: 下载PDF文件 查看货源
内容描述: 现场可编程门阵列 [Field-Programmable Gate Arrays]
分类和应用: 现场可编程门阵列
文件页数/大小: 192 页 / 2992 K
品牌: ETC [ ETC ]
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Data Sheet  
June 1999  
ORCA Series 2 FPGAs  
The write address (WA[3:0]) and write data (WD[3:0])  
are also latched by the RAM clock in order to simplify  
the timing. Reading data from the RAM is done asyn-  
chronously; thus, the read address (RA[3:0]) is not  
latched. The result from the read operation is placed on  
the LUT outputs (F[3:0]). The F[3:0] data outputs can  
be routed out of the PFU or sent to the latch/FF D[3:0]  
inputs.  
Programmable Logic Cells (continued)  
Synchronous Memory Modes—SSPM and SDPM  
The MA/MB asynchronous memory modes described  
previously allow the PFU to perform as a 16 x 4  
(64 bits) single-port RAM. Synchronously writing to this  
RAM requires the write-enable control signal to be  
gated with the clock in another PFU to create a write  
pulse. To simplify this functionality, the Series 2 devices  
contain a synchronous single-port memory (SSPM)  
mode, where the generation of the write pulse is done  
in each PFU.  
There are two ways to use the latches/FFs in conjunc-  
tion with the SSPM. If the phase of the latch/FF clock  
and the RAM clock are the same, only a read address  
or write address can be supplied to the RAM that  
meets the synchronous timing requirements of both  
the RAM clock and latch/FF clock. Therefore, either a  
write to the RAM or a read from the RAM can be done  
in each clock cycle, but not both. If the RAM clock is  
inverted from the latch/FF clock, then both a write to  
the RAM and a read from the RAM can occur in each  
clock cycle. This is done by adding an external write  
address/read address multiplexer as shown in  
Figure 15.  
With SSPM mode, the entire LUT becomes a 16 x 4  
RAM, as shown in Figure 14. In this mode, the input  
ports are write enable (WE), write-port enable (WPE),  
read/write address (A[3:0]), and write data (WD[3:0]).  
To synchronously write the RAM, WE (input into a4)  
and WPE (input into either C0 or CIN) are latched and  
ANDed together. The result of this AND function is sent  
to a pulse generator in the LUT, which writes the RAM  
synchronous to the RAM clock. This RAM clock is the  
same one sent to the PFU latches/FFs; however, if nec-  
essary, it can be programmably inverted.  
The write address is supplied on the phase of the clock  
that allows for setup to the RAM clock, and the read  
address is supplied on the phase of the clock that  
allows the read data to be set up to the latch/FF clock.  
If a higher-speed RAM is required that allows both a  
read and write in each clock cycle, the synchronous  
dual-port memory mode (SDPM) can be used, since it  
does not require the use of an external multiplexer.  
A4  
WE  
WRITE PULSE  
GENERATOR  
D
D
Q
Q
HLUTA  
WR  
F3  
F2  
WPE  
CIN, C0  
WA[3:0]  
RA[3:0]  
SSPM  
WD[3:2]  
WRITE ADDRESS  
1
0
WD  
A
A[3:0]  
A[3:0], B[3:0]  
WD[3:0]  
D
D
Q
READ ADDRESS  
D
Q
WE  
WD[3:0]  
WPE  
Q
HLUTB  
RAM CLK  
WR  
F1  
F0  
WA[3:0]  
RA[3:0]  
WD[1:0]  
CLOCK  
PFU  
5-4644(F).r1  
5-4642(F).r1  
Figure 15. SSPM with Read/Write per Clock Cycle  
Figure 14. SSPM Mode—16 x 4 Synchronous  
Single-Port Memory  
Lucent Technologies Inc.  
13  
 
 
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