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OR2C10A-2BA240I 参数 Datasheet PDF下载

OR2C10A-2BA240I图片预览
型号: OR2C10A-2BA240I
PDF下载: 下载PDF文件 查看货源
内容描述: 现场可编程门阵列 [Field-Programmable Gate Arrays]
分类和应用: 现场可编程门阵列
文件页数/大小: 192 页 / 2992 K
品牌: ETC [ ETC ]
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Data Sheet  
June 1999  
ORCA Series 2 FPGAs  
Programmable Logic Cells (continued)  
UPPER  
ADDRESS  
BITS  
ADDRESS  
DECODE  
LUT1  
BANK_EN1  
WPE  
4
DI  
DO  
WR  
BIDI  
16 x 4 RAM +  
4 BUFFERS/PFU  
4
DOUT  
UPPER  
ADDRESS  
BITS  
ADDRESS  
DECODE  
LUT2  
BANK_EN2  
WPE  
4
4
DIN  
WR  
DI  
DO  
WR  
BIDI  
CLK  
16 x 4 RAM +  
4 BUFFERS/PFU  
5-4640(F)  
Note: The lower address bits are not shown.  
Figure 16. Synchronous RAM with Write-Port Enable (WPE)  
To increase memory word depth above 16 (e.g., 32 x  
4), two or more PLCs can be used. The address and  
write data inputs for the two or more PLCs are tied  
together (bit by bit), and the data outputs are routed  
through the four 3-statable BIDIs available in each  
PFU. The BIDI outputs are then tied together (bit by  
bit), as seen in Figure 16.  
The selection as to which RAM bank to write data into  
does not require the use of LUTs from other PFUs, as  
in previous ORCA architectures. This reduces the num-  
ber of PFUs required for RAMs larger than 16 words in  
depth.  
A special use of this method can be to increase word  
depth to 32 words. Since both the WPE input into the  
RAM and the 3-state input into the BIDI can be  
inverted, a decode of the one upper address bit is not  
required. Instead, the bank-enable signal for both  
banks is tied to the upper address bit, with the WPE  
and 3-state inputs active-high for one bank and active-  
low for the other.  
The control signals of the 3-statable BIDIs, called RAM  
bank-enable (BANK_EN1 and BANK_EN2), are cre-  
ated from a decode of upper address bits. The RAM  
bank-enable is then used to enable 4 bits of data from  
a PLC onto the read data (DOUT) bus.  
The Series 2 series now has a new AND function avail-  
able for each PFU in RAM mode. The inputs to this  
function are the write-enable (WE) signal and the write-  
port enable (WPE) signal. The write-enable signal is  
input on A4, while the write-port enable is input on C0  
or CIN. Generally, the WPE input is driven by the same  
RAM bank-enable signal that controls the BIDIs in each  
PFU.  
To increase the memory’s word size (e.g., 16 x 8), two  
or more PLCs are used again. The address, write-  
enable, and write-port enable of the PLCs are tied  
together (bit by bit), and the data is different for each  
PLC. Increasing both the address locations and word  
size is accomplished by using a combination of these  
two techniques.  
14  
Lucent Technologies Inc.  
 
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