HY29F800
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Setup
Min
Typ
Max
Unit
µA
VIN = VSS to VCC,
CC = VCC Max
ILI
Input Load Current
±1.0
35
V
Input Load Current
A[9], OE#, RESET#
VCC = VCC Max, A[9] =
OE# = RESET# =12.5 V
ILIT
ILO
µA
µA
V
OUT = VSS to VCC,
VCC = VCC Max
Output Leakage Current
±1.0
40
CE# = VIL, OE# = VIH,
f = 5MHz, Byte Mode
20
mA
ICC1
VCC Active Read Current 1, 2
CE# = VIL, OE# = VIH,
f = 5MHz, Word Mode
28
30
50
50
5
mA
mA
µA
ICC2
ICC3
VCC Active Write Current 2, 3, 4 CE# = VIL, OE# = VIH
VCC CE# Controlled
VCC = VCC Max, CE# =
RESET# = VCC ± 0.5V
0.3
CMOS Standby Current 2, 5
VCC RESET# Controlled
VCC = VCC Max,
RESET# = VSS ± 0.5V
ICC4
0.3
5
µA
CMOS Standby Current 2, 5
VIL
VIH
Input Low Voltage
Input High Voltage
-0.5
0.8
V
V
0.7 x VCC
VCC + 0.3
Voltage for Electronic ID and
Temporary Sector Unprotect
VID
V
CC = 5.0V
11.5
12.5
0.45
V
V
V
VCC = VCC Min,
VOL
Output Low Voltage
I
OL = 5.8 mA
VCC = VCC Min,
0.85 x VCC
I
OH = -2.5 mA
CC = VCC Min,
OH = -100 µA
VOH
Output High Voltage
V
I
VCC - 0.4
3.2
V
V
VLKO
Low VCC Lockout Voltage 3
4.2
Notes:
1. The ICC current is listed is typically less than 2 mA/MHz with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCC Max.
3. ICC active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
5. ICC3 = 20 µA maximum for industrial and extended temperature versions.
Rev. 4.0/Jan. 00
22
ETC [ ETC ]
