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HY29F800BT-70E 参数 Datasheet PDF下载

HY29F800BT-70E图片预览
型号: HY29F800BT-70E
PDF下载: 下载PDF文件 查看货源
内容描述: X8 / X16闪存EEPROM [x8/x16 Flash EEPROM ]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 40 页 / 311 K
品牌: ETC [ ETC ]
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HY29F800  
START  
DQ[5] = 1?  
YES  
Read DQ[7:0]  
at Valid Address (Note 1)  
NO  
Read DQ[7:0]  
Read DQ[7:0]  
Read DQ[7:0]  
at Valid Address (Note 1)  
Read DQ[7:0]  
at Valid Address (Note 1)  
YES  
NO  
DQ[6] Toggled?  
(Note 2)  
NO  
DQ[6] Toggled?  
DQ[2] Toggled?  
YES  
NO  
(Note 4)  
NO  
(Note 3)  
YES  
PROGRAM/ERASE  
COMPLETE  
PROGRAM/ERASE  
EXCEEDED TIME ERROR  
SECTOR BEING READ  
IS IN ERASE SUSPEND  
SECTOR BEING READ  
IS NOT IN ERASE SUSPEND  
Notes  
:
1. During programming, the program address.  
During sector erase, an address within any sector scheduled for erasure.  
2. Recheck DQ[6] since toggling may stop at the same time as DQ[5] changes from 0 to 1.  
3. Use this path if testing for Program/Erase status.  
4. Use this path to test whether sector is in Erase Suspend mode.  
Figure 8. Toggle Bit I and II Test Algorithm  
device will accept a sector erase data cycle to mark  
an additional sector for erasure. To ensure that  
the data cycles have been accepted, the system  
software should check the status of DQ[3] prior to  
and following each subsequent sector erase data  
cycle. If DQ[3] is high on the second status check,  
the last data cycle might not have been accepted.  
DQ[7] (Data# Polling) or DQ[6] (Toggle Bit I) to  
ensure that the device has accepted the command  
sequence, and then read DQ[3]. If DQ[3] is a ‘1’,  
the internally controlled erase cycle has begun and  
all further sector erase data cycles or commands  
(other than Erase Suspend) are ignored until the  
erase operation is complete. If DQ[3] is a ‘0’, the  
HARDWARE DATA PROTECTION  
The HY29F800 provides several methods of pro-  
tection to prevent accidental erasure or program-  
ming which might otherwise be caused by spuri-  
ous system level signals during VCC power-up and  
power-down transitions, or from system noise.  
These methods are described in the sections that  
follow.  
when VCC is less than VLKO (typically 3.7 volts). The  
command register and all internal program/erase  
circuits are disabled, and the device resets to the  
Read mode. Writes are ignored until VCC is greater  
than VLKO . The system must provide the proper  
signals to the control pins to prevent unintentional  
writes when VCC is greater than VLKO  
.
Command Sequences  
Write Pulse “Glitch” Protection  
Commands that may alter array data require a  
sequence of cycles as described in Table 5. This  
provides data protection against inadvertent writes.  
Noise pulses of less than 5 ns (typical) on OE#,  
CE# or WE# do not initiate a write cycle.  
Logical Inhibit  
Low VCC Write Inhibit  
Write cycles are inhibited by asserting any one of  
the following conditions: OE# = VIL , CE# = VIH, or  
To protect data during VCC power-up and power-  
down, the device does not accept write cycles  
Rev. 4.0/Jan. 00  
18  
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