Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
MGB880
1.5
handbook, halfpage
MBC097
2
10
handbook, halfpage
V
BEsat
(V)
h
FE
(1)
V
= 5 V
1V
CE
(2)
1
(3)
10
0.5
10
−2
−1
10
1
10
I
(A)
B
1
10
−2
−1
2
10
1
10
10
Tj = 25 °C.
I
(A)
C
(1) IC = 4 A.
(2)
IC = 2 A.
(3) IC = 1 A.
VCE = 5 V; Tj = 25 °C.
Fig.8 Base-emitter saturation voltage as a
function of base current.
Fig.9 DC current gain; typical values.
MBB731
handbook, halfpage
t ≤30 ns
r
I
B on
90%
10%
I
B
V
handbook, halfpage
CC
t
I
I
B off
R
L
V
R
IM
0
B
C on
D.U.T.
90%
10%
t
p
I
C
MGE244
T
t
t
f
t
on
t
s
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
tr ≤ 20 ns.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.11 Switching times waveforms with
resistive load.
Fig.10 Test circuit resistive load.
1999 Jun 11
7
ETC [ ETC ]
