Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
MGB866
10
handbook, full pagewidth
Z
th j−mb
(K/W)
δ = 1
0.75
1
0.50
0.33
0.20
0.10
−1
10
0.05
0.02
0.01
−2
10
0
−3
10
−4
−3
−2
−1
2
10
10
10
10
1
10
10
t
(s)
p
Fig.5 Transient thermal impedance.
MGB884
2
handbook, halfpage
(1)
(2)
(3)
V
CEsat
(V)
MGE239
I
handbook, halfpage
C
(mA)
250
1
200
100
0
0
10
V
(V)
−2
−1
CE
10
1
10
min
I
(A)
B
V
CEOsust
Tj = 25 °C.
(1) IC = 1 A.
(2) C = 2 A.
(3) IC = 4 A.
I
Fig.6 Oscilloscope display for collector-emitter
sustaining voltage.
Fig.7 Collector-emitter saturation voltage as a
function of base current.
1999 Jun 11
6
ETC [ ETC ]
