Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
MGB922
2
10
handbook, full pagewidth
I
C
(A)
I
CM max
10
I
C max
II
1
I
−1
10
DC
−2
10
BUT18F
BUT18AF
−3
10
−4
10
2
3
4
1
10
10
10
10
V
(V)
CE
Mounted without heatsink compound and 30 ±5 N force on centre of package.
Tmb < 25 °C
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.4 Forward bias SOAR.
5
1999 Jun 11