Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
handbook, halfpage
90%
t
r
I
B on
I
B
10%
t
V
C
handbook, halfpage
CC
−I
B off
L
I
V
C on
+I
CL
B
90%
L
B
D.U.T.
−V
BE
I
C
MGE246
10%
t
t
f
t
s
t
MGE238
off
VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH.
Fig.13 Switching time waveforms with
inductive load.
Fig.12 Test circuit inductive load.
1999 Jun 11
8