Si3210/Si3211/Si3212
Table 5. Monitor ADC Characteristics
(V
, V
= 3.13 to 5.25 V, T = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
DDA
DDD A
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Differential Nonlinearity
(6-bit resolution)
DNLE
–1/2
—
1/2
LSB
Integral Nonlinearity
(6-bit resolution)
INLE
–1
—
1
LSB
Gain Error (voltage)
Gain Error (current)
—
—
—
—
10
20
%
%
Table 6. Si321x DC Characteristics, V
= V
= 5.0 V
DDA
= 4.75 V to 5.25 V, T = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
DDD
(V
,V
DDA DDD
A
Parameter
Symbol
Test Condition
Min
Typ
—
Max
Unit
V
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
V
0.7 V
—
—
IH
DDD
V
—
0.3 V
—
V
IL
DDD
DIO1,DIO2,SDITHRU:I = –4 mA
V
V
– 0.6
—
V
O
OH
DDD
SDO, DTX:I = –8 mA
O
DOUT: I = –40 mA
V
– 0.8
—
—
—
V
V
O
DDD
DIO1,DIO2,DOUT,SDITHRU:
Low Level Output Voltage
Input Leakage Current
V
—
0.4
OL
I
= 4 mA
O
SDO,INT,DTX:I = 8 mA
O
I
–10
—
10
µA
L
Table 7. Si321x DC Characteristics, V
= V
= 3.3 V
DDD
DDA
= 3.13 V to 3.47 V, T = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
(V
,V
DDA DDD
A
Parameter
Symbol
Test Condition
Min
Typ
—
Max
Unit
V
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
V
0.7 V
—
—
IH
DDD
V
—
0.3 V
—
V
IL
DDD
DIO1,DIO2,SDITHRU:I = –2 mA
V
V
– 0.6
—
V
O
OH
DDD
SDO, DTX:I = –4 mA
O
DOUT: I = –40 mA
V
– 0.8
—
—
—
V
V
O
DDD
DIO1,DIO2,DOUT,SDITHRU:
Low Level Output Voltage
Input Leakage Current
V
—
0.4
OL
I
= 2 mA
O
SDO,INT,DTX:I = 4 mA
O
I
–10
—
10
µA
L
12
Preliminary Rev. 1.11
ETC [ ETC ]
