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5962-9473002MXC 参数 Datasheet PDF下载

5962-9473002MXC图片预览
型号: 5962-9473002MXC
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 576 CLBs, 10000 Gates, 90.9MHz, 1368-Cell, CMOS, CPGA223, CERAMIC, PGA-223]
分类和应用: 时钟可编程逻辑
文件页数/大小: 68 页 / 685 K
品牌: XILINX [ XILINX, INC ]
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R
XC4000E and XC4000X Series Field Programmable Gate Arrays  
4
C
• • • C  
4
1
EC  
D
D
0
WE  
1
D
IN  
WRITE  
DECODER  
16-LATCH  
ARRAY  
G'  
MUX  
4
1 of 16  
LATCH  
ENABLE  
READ  
ADDRESS  
WRITE PULSE  
4
G
• • • G  
4
1
D
IN  
WRITE  
DECODER  
16-LATCH  
ARRAY  
F'  
MUX  
4
4
F
• • • F  
4
1
1 of 16  
LATCH  
ENABLE  
K
READ  
ADDRESS  
(CLOCK)  
WRITE PULSE  
X6748  
Figure 7: 16x1 Edge-Triggered Dual-Port RAM  
Figure 8 shows the write timing for level-sensitive, sin-  
gle-port RAM.  
attached to the RAM or ROM symbol, as described in the  
schematic library guide. If not defined, all RAM contents  
are initialized to all zeros, by default.  
The relationships between CLB pins and RAM inputs and  
outputs for single-port level-sensitive mode are shown in  
Table 7.  
RAM initialization occurs only during configuration. The  
RAM content is not affected by Global Set/Reset.  
Figure 9 and Figure 10 show block diagrams of a CLB con-  
figured as 16x2 and 32x1 level-sensitive, single-port RAM.  
Table 7: Single-Port Level-Sensitive RAM Signals  
RAM Signal  
CLB Pin  
D0 or D1  
Function  
Data In  
D
Initializing RAM at Configuration  
A[3:0]  
WE  
O
F1-F4 or G1-G4  
WE  
F’ or G’  
Address  
Write Enable  
Data Out  
Both RAM and ROM implementations of the XC4000  
Series devices are initialized during configuration. The ini-  
tial contents are defined via an INIT attribute or property  
T
WC  
ADDRESS  
T
AS  
T
T
WP  
AH  
T
WRITE ENABLE  
DATA IN  
T
DH  
DS  
REQUIRED  
X6462  
Figure 8: Level-Sensitive RAM Write Timing  
6-16  
May 14, 1999 (Version 1.6)