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W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
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W25X10BV/20BV/40BV  
9.2.17 Chip Erase (C7h or 60h)  
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A  
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction  
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and  
shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure  
17.  
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip  
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction  
will commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in  
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY  
bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is  
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable  
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed  
if any page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory  
Protection table).  
Figure 17. Chip Erase Instruction Sequence Diagram  
Publication Release Date: August 20, 2009  
- 29 -  
Preliminary -- Revision B  
 
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