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W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
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W25X10BV/20BV/40BV  
9.2.15  
32KB Block Erase (52h)  
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of  
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block  
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS  
pin low and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2).  
The Block Erase instruction sequence is shown in figure 15.  
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not  
done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block  
Erase instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block  
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the  
status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the  
cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle  
has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase  
instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB,  
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).  
Figure 15. 32KB Block Erase Instruction Sequence Diagram  
Publication Release Date: August 20, 2009  
- 27 -  
Preliminary -- Revision B  
 
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