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W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
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W25X10BV/20BV/40BV  
9.2.18 Power-down (B9h)  
Although the standby current during normal operation is relatively low, standby current can be further  
reduced with the Power-down instruction. The lower power consumption makes the Power-down  
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC  
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code  
“B9h” as shown in figure 18.  
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-  
down instruction will not be executed. After /CS is driven high, the power-down state will entered  
within the time duration of tDP (See AC Characteristics). While in the power-down state only the  
Release from Power-down / Device ID instruction, which restores the device to normal operation, will  
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,  
which is always available during normal operation. Ignoring all but one instruction makes the Power  
Down state a useful condition for securing maximum write protection. The device always powers-up in  
the normal operation with the standby current of ICC1.  
Figure 18. Deep Power-down Instruction Sequence Diagram  
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