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W25X40BV 参数 Datasheet PDF下载

W25X40BV图片预览
型号: W25X40BV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位, 2M位和4M位串行闪存4KB扇区和双I / O SPI [1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI]
分类和应用: 闪存
文件页数/大小: 51 页 / 1636 K
品牌: WINBOND [ WINBOND ]
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W25X10BV/20BV/40BV  
9.2.14 Sector Erase (20h)  
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state  
of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector  
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS  
pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure  
2). The Sector Erase instruction sequence is shown in figure 14.  
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not  
done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector  
Erase instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector  
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the  
status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the  
cycle is finished and the device is ready to accept other instructions again. After the Sector Erase  
cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector  
Erase instruction will not be executed if the addressed page is protected by the Block Protect (TB,  
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).  
Figure 14. Sector Erase Instruction Sequence Diagram  
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