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VG36646141BT-8 参数 Datasheet PDF下载

VG36646141BT-8图片预览
型号: VG36646141BT-8
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 70 页 / 973 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG36641641BT  
CMOS Synchronous Dynamic RAM  
VIS  
9.1 Read to Read command interval  
During a read cycle when a new read command is asserted, it will be effective after the CAS latency,  
even if the previous read operation has not completed. READ will be interrupted by another READ.  
Each read command can be asserted in every clock without any restriction.  
READ to READ Command Interval  
Burst lengh=4, CAS latency=2  
T0  
T1  
T3  
T6  
T2  
T4  
T5  
T7  
T8  
CLK  
Read B  
Read A  
Command  
Hi-Z_  
DQ  
QA0  
QB0  
QB1  
QB2  
QB3  
1 cycle  
9.2 Write to Write Command Interval  
During a write cycle, when a new Write command is asserted, the previous burst will terminated and the  
new burst will begin with a new write command. WRITE will be interrupted by another WRITE.  
Each write command can be asserted in every clock without any restriction.  
WRITE to WRITE Command Interval  
Burst lengh=4, CAS latency=2  
T0  
T1  
T3  
T6  
T7  
T2  
T4  
T5  
T8  
CLK  
Write B  
Write A  
Command  
Hi-Z_  
QA0  
QB0  
DQ  
QB1  
QB2  
QB3  
1 cycle  
Document : 1G5-0127  
Rev2  
Page22  
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