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VG36646141BT-8 参数 Datasheet PDF下载

VG36646141BT-8图片预览
型号: VG36646141BT-8
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 70 页 / 973 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG36641641BT  
CMOS Synchronous Dynamic RAM  
VIS  
10.BURST Termination  
There are two methods to terminate a burst operation other than using a read or a write command.  
One is the burst stop command and the other is the precharge command.  
10.1 BURST Stop Command  
During a read burst. when the burst stop command is asserted, the burst read data are termi-  
nated and the data bus goes to high-impedance after the CAS latency from the burst stop com-  
mand.  
During a write burst, when the burst stop command is asserted, any data provided at that cycle  
will not be written. The burst write is effectively terminated and no further data can be written until a  
new write command is asserted.  
Burst Termination  
Burst lengh=X, CAS Intency=2,3  
T7  
T0  
T1  
T3  
T6  
T2  
T4  
T5  
CLK  
BST  
Read  
Command  
Hi-Z  
CAS latency=2  
Q0  
Q1  
Q0  
Q2  
Q1  
DQ  
Hi-Z  
CAS latency=3  
Q2  
DQ  
Remark BST: Burst stop command  
Burst lengh=X, CAS latency=2,3  
T7  
T0  
T1  
T3  
T6  
T2  
T4  
T5  
CLK  
BST  
Write  
Q0  
Command  
CAS latency=2,3  
Hi-Z_  
Q0  
Q1  
Q2  
DQ  
Remark BST: Burst command  
Document : 1G5-0127  
Rev2  
Page25  
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