VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
VIS
Auto Precharge after Write Burst (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
t
CK2
Start Auto Precharge
Bank B
High
Start Auto Precharge
Bank B
Start Auto Precharge
Bank A
CS
RAS
CAS
WE
A11(BS)
RBa
RBa
RBb
RAc
A10
RAa
A0~A9
CBa
RBb
CAa
CAb
CBb
RAc
CAc
RAa
DQM
DQ
Hi-Z
DBa0 DBa1 DBa2
DAb0 DAb1 DAb2
DAa3
DBa3
DAb3 DBb0
DBb1 DBb2 DBb3 DAc0 DAc1 DAc2 DAc3
DAa0 DAa1
Write
Command
Bank A
DAa2
Start Auto
Precharge
Bank A
Activate
Command
Bank A
Activate
Command
Bank A
Write with
Write with
Auto Precharge
Command
Bank B
Activate
Command
Bank B
Activate
Auto Precharge
Command
Bank A
Command
Bank B
Write with
Write with
Auto Precharge
Auto Precharge
Command
Bank B
Bank A
Document:1G5-0189
Rev.1
Page57
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
